PD-93794D
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ9110
100K Rads (Si)
IRHQ93110 300K Rads (Si)
R
DS(on)
1.1Ω
1.1Ω
I
D
-2.3A
-2.3A
IRHQ9110
100V, QUAD P-CHANNEL
RAD-Hard HEXFET
™
®
MOSFET TECHNOLOGY
LCC-28
International Rectifier’s RAD-Hard
TM
HEXFET
®
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes, refer to the last page
300 (for 5s)
0.89 (Typical)
-2.3
-1.5
-9.2
12
0.1
±20
75
-2.3
1.2
9.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
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1
07/20/11
IRHQ9110
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-100
—
—
-2.0
1.1
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
—
—
1.1
-4.0
—
-25
-250
-100
100
15
4.3
3.3
21
17
32
32
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -1.5A
Ã
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -1.5A
Ã
VDS = -80V, VGS = 0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -2.3A
VDS = -50V
VDD = -50V, ID = -2.3A,
VGS = -12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
285
90
13
—
—
—
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-2.3
-9.2
-3.0
138
555
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = -2.3A, VGS = 0V
Ã
Tj = 25°C, IF = -2.3A, di/dt
≤
-100A/µs
VDD
≤
-25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
10.4
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes, refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHQ9110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
(Per Die)
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (LCC-28)
Diode Forward Voltage
Ã
100K Rads(Si)
1
300K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
= -80V, V
GS
=0V
V
GS
= -12V, I
D
= -1.5A
V
GS
= -12V, I
D
= -1.5A
V
GS
= 0V, IS = -2.3A
Min
-100
- 2.0
—
—
—
—
—
—
Max
—
-4.0
-100
100
- 25
1.056
1.1
-3.0
Min
-100
- 2.0
—
—
—
—
—
—
Max
—
-5.0
-100
100
-25
1.056
1.1
-3.0
1. Part number IRHQ9110
2. Part number IRHQ93110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
Cu
Br
I
LET
MeV/(mg/cm
2
))
28.0
36.8
59.8
Energy
(MeV)
285
305
343
Range
(µm)
@V
GS
=0V @V
GS
=5V
43.0
-100
-100
39.0
-100
-100
32.6
-60
—
V
DS
(V)
@V
GS
=10V
-100
-70
—
@V
GS
=15V
-70
- 50
—
@V
GS
=20V
-60
-40
—
-120
-100
-80
VDS
-60
-40
-20
0
0
5
10
VGS
15
20
Cu
Br
I
Fig a.
Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
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IRHQ9110
Pre-Irradiation
100
10
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
1
-5.0V
1
-5.0V
0.1
0.1
0.01
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.01
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
T
J
= 25
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -2.3A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 150
°
C
1.5
1.0
1
0.5
0.1
V DS = -50V
20µs PULSE WIDTH
5
7
9
11
13
15
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHQ9110
500
400
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -2.3A
16
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance (pF)
300
Ciss
12
200
8
Coss
100
4
Crss
0
1
10
100
0
0
4
8
FOR TEST CIRCUIT
SEE FIGURE 13
12
16
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150
°
C
1
-I
D
, Drain Current (A)
I
10
100us
T
J
= 25
°
C
1
1ms
10ms
0.1
0.5
V
GS
= 0 V
1.0
1.5
2.0
2.5
3.0
3.5
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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