BDX67
BDX67A
BDX67B
BDX67C
MECHANICAL DATA
Dimensions in mm
NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
16.9
10.9
12.8
PNP complements are:
BDX66, BDX66A, BDX66B, BDX66C.
TO3 Package.
Case connected to collector.
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
BDX BDX BDX BDX
67 67A 67B 67C
60
80 100 120 V
80
ì
ï
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stj
R
th j-mb
Semelab plc.
Collector - emitter voltage (open base)
Collector - base voltage (open emitter)
Emitter - base voltage (open collector)
Collector current
Collector current (peak)
Base current
Total power dissipation at T
mb
= 25°C
Maximum junction temperature
Storage junction temperature
Thermal resistance, junction to mounting base.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
100
ï
ï
ï
í
120
ï
ï
ï
140
ï
î
V
V
A
A
mA
W
°C
°C
K/ W
5
5
5
5
16
20
250
150
200
-65 to +200
1.17
7/99
BDX67
BDX67A
BDX67B
BDX67C
ELECTRICAL CHARACTERISTICS
(T
j
= 25°C, unless otherwise stated)
Parameter
I
CBO
I
CEO
I
EBO
h
FE
V
BE
V
CEsat
C
c
f
hfe
E
(BR)
h
fe
V
F
Collector cut-off current
Collector cut-off current
Emitter cut-off current
D.C. current gain (note 1)
Base - emitter voltage (note 1)
Collector - emitter saturation
voltage
Collector capacitance
Cut-off frequency
Turn-off breakdown energy
with inductive load
Small signal current gain
Diode, forward voltage
I
E
= 0,
I
B
= 0,
I
C
= 0,
I
C
=1A,
I
C
= 10A,
I
C
= 16A,
I
C
= 10A,
I
C
= 10A,
Test Conditions
V
CB
= V
CEOmax
V
CE
= ½V
CEOmax
V
EB
= 5V
V
CE
= 3V
V
CE
= 3V
V
CE
= 3V
V
CE
= 3V
I
B
= 40mA
I
E
= 0, V
CB
= ½V
CBOmax,
T
j
= 200°C
Min.
Typ.
Max.
1
5
1
5
Unit.
mA
mA
mA
5200
1000
4000
2.5
2
300
50
150
20
2.5
V
V
pF
kHz
mJ
I
E
= I
e
= 0, V
CB
= 10V f = 1MHz
I
C
= 5A,
–I
Boff
= 0,
t
p
= 1ms,
I
F
= 10A
V
CE
= 3V
I
CC
= 7.8 A
d
< 1%
V
I
C
= 5A, V
CE
= 3V, f = 1MHz
Note 1: Measured under pulse conditions , t
p
< 300
m
s,
d
< 2%
C
B
R1 typ. 3K
W
R2 typ. 80
W
R1
R2
E
Circuit Diagram
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
7/99
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