Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | Diodes |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | BUILT-IN BIAS RESISTANCE RATIO IS 21.28 |
最大集电极电流 (IC) | 0.1 A |
集电极-发射极最大电压 | 50 V |
配置 | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 56 |
JESD-30 代码 | R-PDSO-G3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 235 |
极性/信道类型 | PNP |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | TIN LEAD |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 10 |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 200 MHz |
DDTA142JU-13 | DDTA122TU-13 | DDTA142TU-13 | |
---|---|---|---|
描述 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 |
是否无铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 |
厂商名称 | Diodes | Diodes | Diodes |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
其他特性 | BUILT-IN BIAS RESISTANCE RATIO IS 21.28 | BUILT-IN BIAS RESISTOR | BUILT-IN BIAS RESISTOR |
最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A |
集电极-发射极最大电压 | 50 V | 40 V | 40 V |
配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 56 | 100 | 100 |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
JESD-609代码 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 235 | 235 | 235 |
极性/信道类型 | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | 10 | 10 | 10 |
晶体管元件材料 | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 200 MHz | 200 MHz | 200 MHz |
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