DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D252
CGD914; CGD914MI
860 MHz, 20 dB gain power
doubler amplifier
Product specification
Supersedes data of 2000 Jul 25
2001 Nov 01
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
CGD914; CGD914MI
PINNING - SOT115J
DESCRIPTION
PIN
CGD914
1
2 and 3
5
7 and 8
9
input
common
+V
B
common
output
CGD914MI
output
common
+V
B
common
input
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC), employing both GaAs
and Si dies. Both modules are electrically identical, only
the pinning is different.
1
2
3
5
7
8
9
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
power gain
total current consumption (DC)
PARAMETER
CONDITIONS
f = 45 MHz
f = 870 MHz
V
B
= 24 V
MIN.
19.75
20.2
345
MAX.
20.25
21.5
375
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
B
V
i
supply voltage
RF input voltage
single tone
132 channels flat
T
stg
T
mb
storage temperature
operating mounting base temperature
PARAMETER
40
20
MIN.
70
45
+100
+100
dBmV
dBmV
C
C
MAX.
30
V
UNIT
2001 Nov 01
2
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
CHARACTERISTICS
Bandwidth 45 to 870 MHz; V
B
= 24 V; T
mb
= 35
C;
Z
S
= Z
L
= 75
SYMBOL
G
p
SL
FL
PARAMETER
power gain
slope straight line
flatness straight line
f = 45 MHz
f = 870 MHz
f = 45 to 870 MHz
f = 45 to 100 MHz
f = 100 to 800 MHz
f = 800 to 870 MHz
flatness narrow band
s
11
input return losses
in each 6 MHz segment
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
s
21
s
12
CTB
phase response
reverse isolation
composite triple beat
f = 50 MHz
RF
out
to RF
in
79 chs; f
m
= 445.25 MHz; note 1
112 chs; f
m
= 649.25 MHz; note 2
132 chs; f
m
= 745.25 MHz; note 3
79 chs flat; V
o
= 44 dBmV; f
m
= 547.25 MHz
112 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
132 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
X
mod
cross modulation
79 chs; f
m
= 55.25 MHz; note 1
112 chs; f
m
= 55.25 MHz; note 2
132 chs; f
m
= 55.25 MHz; note 3
79 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
112 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
132 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
CONDITIONS
CGD914; CGD914MI
MIN.
19.75
20.2
0.2
0.25
0.6
0.45
20
20
18
16
15
14
14
10
21
21
20
19
18
17
16
14
45
TYP.
20
21
1
MAX.
20.25
21.5
1.5
0.25
+0.4
+0.2
0.1
+45
22
76
64
55
73
64
60
70
62
57
69
65
63
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
2001 Nov 01
3
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
SYMBOL
PARAMETER
CONDITIONS
79 chs; f
m
= 446.5 MHz; note 1
112 chs; f
m
= 746.5 MHz; note 2
132 chs; f
m
= 860.5 MHz; note 3
79 chs flat; V
o
= 44 dBmV; f
m
= 548.5 MHz
112 chs flat; V
o
= 44 dBmV; f
m
= 746.5 MHz
132 chs flat; V
o
= 44 dBmV; f
m
= 860.5 MHz
CSO Diff
composite second
order distortion (diff)
79 chs; f
m
= 150 MHz; note 1
112 chs; f
m
= 150 MHz; note 2
132 chs; f
m
= 150 MHz; note 3
79 chs flat; V
o
= 44 dBmV; f
m
= 150 MHz
112 chs flat; V
o
= 44 dBmV; f
m
= 150 MHz
132 chs flat; V
o
= 44 dBmV; f
m
= 150 MHz
NF
noise figure
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 870 MHz
d
2
second order distortion
note 4
note 5
note 6
V
o
output voltage
d
im
=
60
dB; note 7
d
im
=
60
dB; note 8
d
im
=
60
dB; note 9
I
tot
Notes
total current
consumption (DC)
note 10
CGD914; CGD914MI
MIN.
69
66
63
345
TYP.
2.5
2.5
2.6
3
360
MAX.
71
60
56
63
54
49
59
53
48
60
59
57
3
3
3.5
3.5
60
54
50
375
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dBmV
dBmV
mA
CSO Sum composite second
order distortion (sum)
1. V
o
= 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz.
2. V
o
= 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz.
3. V
o
= 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz).
4. f
p
= 55.25 MHz; V
p
= 60 dBmV; f
q
= 493.25 MHz; V
q
= 60 dBmV; measured at f
p
+ f
q
= 548.5 MHz.
5. f
p
= 55.25 MHz; V
p
= 60 dBmV; f
q
= 691.25 MHz; V
q
= 60 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
6. f
p
= 55.25 MHz; V
p
= 60 dBmV; f
q
= 805.25 MHz; V
q
= 60 dBmV; measured at f
p
+ f
q
= 860.5 MHz.
7. Measured according to DIN45004B: f
p
= 540.25 MHz; V
p
= V
o
; f
q
= 547.25 MHz; V
q
= V
o
6
dB; f
r
= 549.25 MHz;
V
r
= V
o
6
dB; measured at f
p
+ f
q
f
r
= 538.25 MHz.
8. Measured according to DIN45004B: f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
6
dB; f
r
= 749.25 MHz;
V
r
= V
o
6
dB; measured at f
p
+ f
q
f
r
= 738.25 MHz.
9. Measured according to DIN45004B: f
p
= 851.25 MHz; V
p
= V
o
; f
q
= 858.25 MHz; V
q
= V
o
6
dB; f
r
= 860.25 MHz;
V
r
= V
o
6
dB; measured at f
p
+ f
q
f
r
= 849.25 MHz.
10. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 01
4
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
CGD914; CGD914MI
handbook, halfpage
−60
MCD976
52
Vo
(dBmV)
48
handbook, halfpage
−60
MCD977
52
Vo
(dBmV)
48
CTB
(dB)
−70
(1)
Xmod
(dB)
−70
(1)
−80
44
−80
44
−90
(2)
(3)
(4)
(2)
40
−90
40
(3)
(4)
−100
0
200
400
600
36
1000
800
f (MHz)
−100
0
200
400
600
36
1000
800
f (MHz)
Z
S
= Z
L
= 75
;
V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
3 .
Z
S
= Z
L
= 75
;
V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
3 .
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
handbook, halfpage
−50
MCD978
52
Vo
(dBmV)
48
handbook, halfpage
−50
MCD979
54
(2)
(1)
(3)
CSO
(dB)
−60
(1)
CSO
(dB)
−60
Vo
(dBmV)
50
(2)
(3)
−70
44
(4)
46
−70
(4)
−80
40
42
−80
−90
38
−90
0
200
400
600
36
1000
800
f (MHz)
−100
0
200
400
600
34
800
1000
f (MHz)
Z
S
= Z
L
= 75
;
V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
3 .
Z
S
= Z
L
= 75
;
V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
3 .
Fig.4
Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
Fig.5
Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
2001 Nov 01
5
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