Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFX5096/5
1 AMP, 500 Volts
High Voltage PNP Transistor
Features:
BV
CER
to 500 Volts
Low Leakage at High Temperature
High Linear Gain, Low Saturation Voltage
200
o
C Operating Temperature
Gold Eutectic Die Attach
TX, TXV, S-Level Screening Available
Designed for Complementary Use with SFT5015
Replacement for 2N5094 and 2N5096 with Lower
Thermal Resistance
Symbol
V
CEO
V
CER
V
CBO
V
EBO
I
C
I
B
(T
C
= 25ºC)
(T
A
= 25ºC)
SFX5096
400
500
500
6
1.0
0.5
1.0
0.4
5.7
-65 to +200
30
Units
Volts
Volts
Volts
Volts
Amps
Amps
Watts
Watts
mW /ºC
ºC
ºC/W
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFX5096
__ __
2/
__
= No Screening
│ └
Screening
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
│
└
Package
3/
/5 = TO-5
Maximum Ratings
4/
Collector – Emitter Voltage
(R
BE
= 1kΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Power Dissipation
Derate above T
C
= 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
TO-5
P
D
T
J
& T
STG
R
0JC
NOTES:
1/ For ordering information, price, operating curves, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ For Package Outlines, See Figure 1.
4/ Unless Otherwise Specified, Maximum Ratings/Electrical Characteristics at 25°C.
TO-5 (/5)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0127A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFX5096/5
Symbol
(I
C
= 5 mA)
(I
C
= 100
μA,
R
BE
= 1k
Ω)
(I
C
= 100
μA)
(I
E
= 50 µA)
(V
CB
= Rated, T
A
= 25°C)
(V
CB
= Rated, T
A
= 100°C)
(V
EB
= 6 V)
(I
C
= 1 mA, V
CE
= 10 V)
(I
C
= 25 mA, V
CE
= 10 V)
(I
C
= 100 mA, V
CE
= 10 V)
(I
C
= 25 mA, I
B
= 2.5 mA)
(I
C
= 25 mA, I
B
= 2.5 mA)
BV
CEO
BV
CER
BV
CBO
BV
EBO
I
CBO1
I
CBO2
I
EBO
H
FE
V
CE (SAT)
V
BE (SAT)
f
T
C
ob
T
d
T
r
T
s
t
f
Min
400
500
500
6
––
––
––
20
40
20
––
––
40
––
––
––
––
––
Max
––
––
––
––
1.0
50
1.0
250
300
250
500
1.0
––
60
100
350
3.2
500
mV
Volts
MHz
pF
ns
ns
μs
ns
Units
Volts
Volts
Volts
µA
µA
Electrical Characteristics
4/
Collector – Emitter Breakdown
Voltage *
Collector – Base Breakdown
Voltage *
Emitter – Base Breakdown
Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product *
(I
C
= 10 mA, V
CE
= 10 V, f = 10 MHz)
Output Capacitance
Turn on Delay Time
Rise Time
Storage Time
Fall Time
V
CB
= 20 V, I
E
= 0 A, f = 1.0MHz
V
CC
= 100 V
I
C
= 100 mA
I
B1
= I
B2
= 10 mA
Notes: *
Pulse Test: Pulse Width = 300
μ
s. Duty Cycle = 2%.
1/ For ordering information, price, operating curves, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ For Package Outlines, See Figure 1.
4/ Unless Otherwise Specified, Maximum Ratings/Electrical Characteristics at 25°C.
Package
TO-5 (/5)
PIN ASSIGNMENT (Standard)
Collector
Emitter
Pin 3
Pin 1
Base
Pin 2
FIGURE 1 – CASE OUTLINES
TO-5 (/5):
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0127A
DOC
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