CYIS1SM0250AA
STAR250 250K Pixel Radiation Hard
CMOS Image Sen
sor
Features
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Applications
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512 × 512 active pixels
25
μm
pixel size
1 inch optical format
Up to 30 frames per second (fps) at full resolution
10-bit analog-to-digital converter (ADC)
Electronic shutter
8 MHz maximum data rate/master clock
3340 V.m
2
/W.s sensitivity
74 dB (5000:1) dynamic range
76 e
-
kTC noise
4750 e
-
/s at RT dark current
5V supply voltage
Operating temperature range
❐
0 °C to +65 °C (STAR250)
❐
–40 °C to +85 °C (STAR250BK7)
Gamma total dose radiation tolerance:
2
❐
Increase in average dark current < 1 nA/cm after 3 MRad
❐
Image operation with dark signal < 1 V/s after 10 Mrad dem-
onstrated (Co60)
Proton radiation tolerance:
2
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1% of pixels has an increase in dark current > 1 nA/cm after
3*10^10 protons at 11.7 MeV
SEL threshold > 80 MeV cm
3
mg
-1
Mono color filter array
84-pin JLCC package
Less than 350 mW power consumption
Satellites
Spacecraft monitoring
Nuclear inspection
Overview
The STAR250 sensor is a CMOS active pixel sensor designed
for application in optical inter-satellite link beam trackers. The
STAR250 is part of broader range of applications including space
borne systems such as sun sensing and star tracking. It features
512 × 512 pixels on a 25
μm
pitch, on chip fixed pattern noise
(FPN) correction, a programmable gain amplifier, and a 10-bit
ADC. Flexible operating (multiple windowing, subsampling) is
possible by direct addressable X and Y registers.
The sensor has an outstanding radiation tolerance that is
observed using proprietary technology modifications and design
techniques. Two versions of the sensors are available, STAR250
and STAR250BK7. STAR250 has a quartz glass lid and air in the
cavity. The STAR250BK7 has a BK7G18 glass lid with anti
reflective coating. The cavity is filled with N
2
increasing the
temperature operating range.
Figure 1. Star250 Photograph
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Ordering Information
Marketing Part Number
CYIS1SM0250AA-HHC
CYIS1SM0250AA-HHCS
CYIS1SM0250AA-WWC
Description
Mono with BK7G18 glass
Mono with BK7G18 glass, space qualified
Mono wafer
Package
84-pin JLCC
Wafer Sales (production)
Refer
Ordering Code Definition
on page 20 for more information.
Cypress Semiconductor Corporation
Document Number: 38-05713 Rev. *F
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised December 8, 2010
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CYIS1SM0250AA
Contents
Features ...............................................................................1
Applications ........................................................................1
Overview ..............................................................................1
Ordering Information ..........................................................1
Specifications .....................................................................3
Electrical Specifications .................................................6
Sensor Architecture ...........................................................9
Pixel Structure ...............................................................9
Shift Registers .............................................................10
Column Amplifiers .......................................................10
Electronic Shutter ........................................................10
Programmable Gain Amplifier .....................................11
Analog-to-Digital Converter .........................................11
Timing and Readout of Image Sensor ............................11
Image Readout Procedure ..........................................11
Loading the X and Y Start Positions ............................13
Other Signals ...............................................................14
Pinlist .................................................................................15
Package .............................................................................18
Package with Glass .....................................................18
Die Alignment ..............................................................19
Window Specifications ................................................20
Ordering Code Definition .............................................20
Soldering and Handling ...................................................21
Handling Precautions .......................................................21
Limited Warranty .........................................................21
RoHS (Pb-free) Compliance ........................................21
Evaluation Kit ..............................................................21
Acronyms ..........................................................................22
Document History Page ...................................................23
Sales, Solutions, and Legal Information ........................23
Worldwide Sales and Design Support .........................23
Document Number: 38-05713 Rev. *F
Page 2 of 23
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CYIS1SM0250AA
Specifications
Table 1. General Specifications
Parameter
Pixel architecture
Pixel size
Resolution
Pixel rate
Shutter type
Frame rate
Extended dynamic range
Programmable gain
Supply voltage V
DD
Operational temperature
range
Package
Table 2. Electro-optical Specifications
Parameter
Detector technology
Pixel structure
Photodiode
Sensitive area format
Pixel size
Spectral range
Quantum efficiency x fill
factor
Full well capacity
Linear range within +1%
Output signal swing
Conversion gain
Temporal noise
Dynamic range
FPN
PRNU (photo response
nonuniformity)
Average dark current
signal
DSNU (dark signal nonuni-
formity)
MTF
Specification (Typical)
CMOS active pixel sensor
3-transistor active pixel
4 diodes per pixel
High fill factor photodiode
512 by 512 pixels
25
μm
2
× 25
μm
2
200 nm to 1000 nm
Maximum 35%
311K electrons
128K electrons
1.68 V
5.7
μV/e
76 e
-
74 dB (5000:1)
1 < 0.1% of full well
(typical)
Local: 1 = 0.39% of response
Global: 1 = 1.3% of response
4750 e
-
/s
3805 e
-
/s RMS
Horizontal: 0.36
Vertical: 0.39
-
Specification
3 transistor active pixel
4 diodes per pixel
25 × 25
μm
2
512 × 512 pixels
8 Mps
Electronic
29 full frames/second
Double slope
Programmable between x1, x2, x4, x8
5V
0 °C to +65 °C
–40 °C to +85 °C
84-pin JLCC
Remarks
Radiation-tolerant pixel design
4 photodiodes for improved MTF
Integration time is variable, steps equal to the row
readout time
Selectable through pins G0 and G1
STAR250 (quartz glass lid, air in cavity)
STAR250BK7 (BK7G18 glass lid, N
2
in cavity)
Comment
Radiation-tolerant pixel design
4 photodiodes for improved MTF
See
Figure 2
and
Figure 3
Above 20% between 450 nm and 750 nm
(Metal FillFactor (MFF) is 63%)
When output amplifier gain = 1
When output amplifier gain = 1
When output amplifier gain = 1
When output amplifier gain = 1 near dark
Dominated by kTC
At the analog output
Measured local, on central image area 50% of pixels in
the dark
Measured in central image area 50% of pixels, at Qsat/2
At RT
At RT, scale linearly with integration time
at 600 nm.
Document Number: 38-05713 Rev. *F
Page 3 of 23
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CYIS1SM0250AA
Table 2. Electro-optical Specifications
(continued)
Parameter
Optical cross talk
Antiblooming capacity
Output amplifier gain
Windowing
Electronic shutter range
ADC
ADC linearity
Missing codes
ADC setup time
ADC delay time
Power dissipation
Spectral Response Curve
Figure 2. Spectral Response Curve
0.2
QE 0.4
QE 0.3
QE 0.2
Specification (Typical)
5% to nearest neighbor if central pixel is
homogeneously illuminated
x 1000 to × 100 000
1, 2, 4, or 8
X and Y 9-bit programmable shift
registers
1: 512
10-bit
±3.5 counts
none
310 ns
125 ns
< 350 mW
INL
Controlled by two bits
Comment
Indicate upper left pixel of each window
Integration time is variable in time steps equal to the row
readout time
To reach 99% of final value
Average at 8 MHz pixel rate
0.15
Spectral respnse [A/W]
0.1
QE 0.1
0.05
QE 0.05
QE 0.01
0
400
500
600
700
800
900
1000
1100
Wavelength [nm]
Document Number: 38-05713 Rev. *F
Page 4 of 23
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CYIS1SM0250AA
Figure 3. UV Region Spectral Response Curve
STAR250
UV-m easurem ent
1,00E+00
200
FF * Spectral Response [A/W]
250
300
350
400
450
QE 100%
500
1,00E-01
QE 10%
1,00E-02
QE 1%
1,00E-03
1,00E-04
WaveLength [nm ]
Pixel Profile
Figure 4. Pixel Profile
horizontal pixel profile
Vertica pixel profile
Imaginary pixel boundaries
Relative profile
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
Scan distance [mm]
The pixel profile is measured using the 'knife edge' method: the image of a target containing a black to white transition is scanned
over a certain pixel with subpixel resolution steps. The sensor settings and illumination conditions are adjusted such that the transition
covers 50% of the output range. The scan is performed both horizontal and vertical.
Document Number: 38-05713 Rev. *F
Page 5 of 23
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