PD-94237F
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
IRHSNA57Z60
IRHSNA53Z60
IRHSNA54Z60
IRHSNA58Z60
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
3.5mΩ
3.5mΩ
3.5mΩ
4.0mΩ
Q
G
200nC
200nC
200nC
200nC
SMD-2
IRHSNA57Z60
30V, N-CHANNEL
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n
Co-Pack N-channel RAD-Hard MOSFET
n
n
n
n
n
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSLNA57Z60 for Lower Inductance
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➃
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Schottky and Body Diode Avg. Forward Current
➂
Schottky and Body Diode Avg. Forward Current
➂
Opeating and Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
Pre-Irradiation
Units
75*
75*
300
250
2.0
±20
500
75
25
75*
75*
-55 to 150
300 (for 5s)
3.3 (Typical)
A
W
W/°C
V
mJ
A
mJ
A
°C
g
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1
09/06/02
IRHSNA57Z60
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
30
—
2.0
45
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
—
—
—
—
—
—
3.5
4.0
—
50
50
V
mΩ
V
S( )
µA
mA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
VGS = 12V, ID = 45A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 45A
VDS = 24V, VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A,
VDS = 15V
VDD = 15V, ID = 45A,
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
100
— -100
—
200
—
55
—
40
—
35
—
160
—
78
—
26
7.03
—
nA
nC
ns
nH
Measured from center of drain
pad to center of source pad
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
VSD
Diode Forward Voltage
Min Typ Max Units
—
—
—
—
—
—
—
1.15
—
1.05
—
0.95
—
175
—
500
8.09 —
Test Conditions
TJ = -55°C, ID=45A, VGS = 0V
TJ = 25°C, ID= 45A, VGS = 0V
TJ = 110°C, ID=45A, VGS = 0V
Tj = 25°C, IF =45A, di/dt
≤
100A/µs
VDS
≤
30V
Measured from center of drain pad to
center of source pad (for Schottky only)
V
nS
nC
nH
trr
Reverse Recovery Time
Q RR
Reverse Recovery Charge
LS + LD Total Inductance
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD
Thermal Resistance
Parameter
RthJC
RthJC
Junction-to-Case (MOSFET)
Junction-to-Case (Schottky)
Min Typ Max
—
—
—
—
0.5
0.7
Units
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHSNA57Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
⑦
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➁
On-State Resistance (TO-3)
Static Drain-to-Source
➁
On-State Resistance (SMD-2)
Diode Forward Voltage
➁
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
30
2.0
—
—
—
—
—
—
—
4.0
100
-100
10
4.0
3.5
1.3
30
1.5
—
—
—
—
—
—
—
4.0
100
-100
25
5.0
4.0
1.3
V
nA
µA
mΩ
mΩ
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 24V, V
GS
=0V
V
GS
= 12V, I
D
=45A
V
GS
= 12V, I
D
=45A
V
GS
= 0V, IS = 45A
1. Part numbers IRHSNA57Z60, IRHSNA53Z60 and IRHSNA54Z60
2. Part number IRHSNA58Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
⑦
Ion
Br
I
Au
LET
MeV/(mg/cm
2
))
37.9
59.4
80.3
Energy
(MeV)
255
290
313
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
33.4
30
30
30
25
20
28.8
25
25
20
15
10
26.5
22.5
22.5
15
10
—
35
30
25
VDS
20
15
10
5
0
0
-5
-10
VGS
-15
-20
Br
I
AU
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHSNA57Z60
Pre-Irradiation
10000
I
D
, Drain-to-Source Current (A)
1000
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
10
10
4.5V
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
1
0.1
1
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 75A
I
D
, Drain-to-Source Current (A)
100
T
J
= 150
°
C
1.5
T
J
= 25
°
C
10
1.0
0.5
1
4.0
V DS = 15V
20µs PULSE WIDTH
7.0
5.0
6.0
8.0
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHSNA57Z60
20
I
D
=
45A
V
GS
, Gate-to-Source Voltage (V)
16
V
DS
= 24V
V
DS
= 15V
12
8
4
0
0
50
100
150
200
250
300
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
.3µF
12 V
Q
GS
V
G
Q
GD
V
GS
3mA
D.U.T.
+
V
-
DS
Charge
I
G
I
D
Current Sampling Resistors
Fig 5a.
Basic Gate Charge Waveform
Fig 5b.
Gate Charge Test Circuit
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