Si4350DY
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
Channel-1
Channel 1
20
Channel-2
Channel 2
FEATURES
r
DS(on)
(W)
0.012 @ V
GS
= 10 V
0.0175 @ V
GS
= 4.5 V
0.0075 @ V
GS
= 10 V
0.010 @ V
GS
= 4.5 V
I
D
(A)
9.6
7.8
15
13
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
−
Game Stations
−
Notebook PC Logic
SO-14
D
1
D
1
G
1
G
2
S
2
S
2
S
2
1
2
3
4
5
6
7
Top View
14
13
12
11
10
9
8
S
1
S
1
D
2
D
2
D
2
D
2
D
2
Ordering Information: Si4350DY
Si4350DY-T1 (with Tape and Reel)
G
1
D
1
D
2
G
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Channel-1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Channel-2
10 secs
20
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
"20
Steady State
"20
Unit
V
9.6
7.7
40
1.8
2.0
1.28
7.3
5.8
1.04
1.14
0.73
−55
to 150
15
12
50
2.73
3.0
1.9
10
8
1.30
1.43
0.91
W
_C
A
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72568
S-32514—Rev. A, 08-Dec-03
www.vishay.com
t
v
10 sec
Steady-State
Steady-State
Channel-2
Typ
35
72
18
Symbol
R
thJA
R
thJF
Typ
53
92
35
Max
62.5
110
42
Max
42
87
23
Unit
_C/W
C/W
1
Si4350DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED).
Parameter
Static
Gate Threshold Voltage
Gate-Body
Gate Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 20 V, V
GS
= 0 V
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V T
J
= 85_C
V
V,
On-State
On State Drain Current
b
I
D( )
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
V
GS
= 10 V, I
D
= 9.6 A
Drain-Source On-State
Drain Source On State Resistance
b
r
DS( )
DS(on)
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 7.8 A
V
GS
= 4.5 V, I
D
= 13 A
Forward Transconductance
b
Diode Forward Voltage
b
g
f
fs
V
SD
V
DS
= 15 V, I
D
= 9.6 A
V
DS
= 15 V, I
D
= 15 A
I
S
= 1.8 A, V
GS
= 0 V
I
S
= 2.73 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
30
0.0095
0.006
0.0135
0.008
25
48
0.74
0.73
1.1
1.1
0.012
0.0075
0.0175
0.010
S
V
W
0.8
1.0
2.0
3.0
100
100
1
100
1
100
A
mA
V
nA
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Total Gate Charge
Gate-Source
Gate Source Charge
Gate-Drain
Gate Drain Charge
Gate Resistance
Turn-On
Turn On Delay Time
Rise Time
Turn-Off
Turn Off Delay Time
Fall Time
Source-Drain
Source Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
d
R
g
t
d( )
d(on)
t
r
t
d( ff)
d(off)
t
f
t
rr
I
F
= 1.8 A, di/dt = 100 A/ms
I
F
= 2.73 A, di/dt = 100
mA/ms
Channel-1
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
Channel 2
Channel-2
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A V
GEN
= 10 V R
G
= 6
W
A,
V,
Ch-1
Channel 1
Channel-1
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 9.6 A
Channel 2
Channel-2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
=
−15
A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.45
0.7
10
20
3.3
6.2
3.1
6.8
0.9
1.4
15
15
16
15
42
60
16
17
35
40
1.35
2.1
25
25
25
25
65
90
25
30
60
65
ns
W
15
30
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
www.vishay.com
2
Document Number: 72568
S-32514—Rev. A, 08-Dec-03
Si4350DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 10 thru 4 V
40
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
40
50
Vishay Siliconix
CHANNEL-1
Transfer Characteristics
30
30
20
3V
20
T
C
= 125_C
10
25_C
−55_C
10
2V
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
−
Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.020
r
DS(on)
−
On-Resistance (
W
)
1800
1500
V
GS
= 4.5 V
0.012
V
GS
= 10 V
0.008
C
−
Capacitance (pF)
1200
900
600
300
0
0
10
20
30
40
50
0
4
C
rss
Capacitance
0.016
C
iss
C
oss
0.004
0.000
8
12
16
20
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
6
V
GS
−
Gate-to-Source Voltage (V)
5
4
3
2
1
0
0.0
V
DS
= 10 V
I
D
= 9.6 A
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 9.6 A
1.4
r
DS(on)
−
On-Resistance (
W)
(Normalized)
5.2
7.8
10.4
13.0
1.2
1.0
0.8
2.6
0.6
−50
−25
0
25
50
75
100
125
150
Q
g
−
Total Gate Charge (nC)
Document Number: 72568
S-32514—Rev. A, 08-Dec-03
T
J
−
Junction Temperature (_C)
www.vishay.com
3
Si4350DY
Vishay Siliconix
New Product
CHANNEL-1
On-Resistance vs. Gate-to-Source Voltage
0.040
T
J
= 150_C
I
S
−
Source Current (A)
0.035
r
DS(on)
−
On-Resistance (
W
)
I
D
= 9.6A
0.030
0.025
0.020
0.015
0.010
0.005
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
10
T
J
= 25_C
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
−0.0
−0.2
−0.4
−0.6
−0.8
−50
40
Power (W)
120
200
Single Pulse Power
160
80
0
−25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
−
Temperature (_C)
100
Safe Operating Area, Junction-to-Case
Limited by r
DS(on)
I
D
−
Drain Current (A)
10
1 ms
10 ms
100 ms
1s
1
0.1
T
C
= 25_C
Single Pulse
10 s
dc
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
4
Document Number: 72568
S-32514—Rev. A, 08-Dec-03
Si4350DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
CHANNEL-1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 92_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72568
S-32514—Rev. A, 08-Dec-03
www.vishay.com
5
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