Si4310DY
New Product
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
FEATURES
r
DS(on)
(W)
0.012 @ V
GS
= 10 V
0.018 @ V
GS
= 4.5 V
0.010 @ V
GS
= 10 V
0.0110 @ V
GS
= 4.5 V
I
D
(A)
9.6
7.8
13.5
12.8
D
TrenchFETr Power MOSFET
APPLICATIONS
D
DC-DC Converters
– Game Stations
– Video Graphics
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.53 V @ 3 A
I
F
(A)
2.0
SO-14
D
1
D
1
G
1
G
2
S
2
S
2
S
2
1
2
3
4
5
6
7
Top View
14
13
12
11
10
9
8
S
1
S
1
D
2
D
2
D
2
D
2
D
2
D
1
D
2
Schottky Diode
G
1
G
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Channel-1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Channel-2
10 secs
30
Symbol
V
DS
V
GS
10 secs
Steady State
"20
Steady State
"12
Unit
V
9.6
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.8
2
1.28
7.7
40
7.3
5.8
13.5
10.8
50
9.9
7.6
A
1.33
1.47
0.94
W
_C
1.04
1.14
0.73
–55 to 150
2.73
3.0
1.9
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71823
S-20828—Rev. A, 17-Jun-02
www.vishay.com
Steady-State
Steady-State
R
thJA
R
thJC
Channel-2
Typ
34
70
17
Schottky
Typ
40
76
21
Symbol
Typ
50
90
33
Max
62.5
110
40
Max
42
85
22
Max
48
93
26
Unit
_C/W
C/W
1
Si4310DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED).
Parameter
Static
Gate Threshold Voltage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
m
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85_C
_
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 9.6 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 13.5 A
V
GS
= 4.5 V, I
D
= 7.8 A
V
GS
= 4.5 V, I
D
= 12.8 A
Forward Transconductance
b
Diode Forward Voltage
b
g
fs
V
SD
V
DS
= 15 V, I
D
= 9.6 A
V
DS
= 15 V, I
D
= 13.5 A
I
S
= 1.8 A, V
GS
= 0 V
I
S
= 2.73 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
30
0.010
0.007
0.015
0.085
25
56
0.7
0.485
1.1
0.53
V
S
0.012
0.010
0.018
0.0110
W
A
0.8
0.8
1.40
1.35
2.00
1.90
100
100
1
100
15
4000
mA
m
nA
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Gate-Body Leakage
Dynamic
a
Total Gate Charge
Q
g
Channel-1
V
DS
= 15 V, V
GS
= 5 V, I
D
= 9.6 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.8 A, di/dt = 100 A/ms
I
F
= 2.73 A, di/dt = 100
mA/ms
Channel-1
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
Channel-2
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
Channel-2
V
DS
= 15 V, V
GS
= 5 V, I
D
= –13.5 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
11.5
40
3
10
4.5
8.8
1.45
0.8
10
17
5
14
30
102
10
26
30
40
20
26
10
21
60
155
20
40
60
65
ns
W
17
60
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
V
F
Test Condition
I
F
= 3 A
I
F
= 3 A, T
J
= 125_C
V
r
= 30 V
V
r
= 30 V, T
J
= 75_C
V
r
= –30 V, T
J
= 125_C
V
r
= 15 V
Min
Typ
0.485
0.42
0.008
0.4
6.5
102
Max
0.53
0.42
0.100
5
20
Unit
V
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
mA
pF
www.vishay.com
2
Document Number: 71823
S-20828—Rev. A, 17-Jun-02
Si4310DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10 thru 4 V
25
I
D
– Drain Current (A)
I
D
– Drain Current (A)
25
30
Vishay Siliconix
CHANNEL 1
Transfer Characteristics
20
3V
15
20
15
10
10
T
C
= 125_C
25_C
–55_C
5
2V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.025
r
DS(on)
– On-Resistance (
W
)
1400
1200
C – Capacitance (pF)
0.020
V
GS
= 4.5 V
0.015
V
GS
= 10 V
0.010
1000
800
600
Capacitance
C
iss
C
oss
400
C
rss
200
0.005
0.000
0
5
10
15
20
25
30
0
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 12.5 A
8
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 12.5 A
1.4
6
r
DS(on)
– On-Resistance (
W)
(Normalized)
8
12
16
20
24
1.2
4
1.0
2
0.8
0
0
4
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Document Number: 71823
S-20828—Rev. A, 17-Jun-02
www.vishay.com
3
Si4310DY
Vishay Siliconix
New Product
CHANNEL 1
On-Resistance vs. Gate-to-Source Voltage
0.05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
T
J
= 150_C
I
S
– Source Current (A)
10
r
DS(on)
– On-Resistance (
W
)
0.04
I
D
= 12.5 A
0.03
0.02
T
J
= 25_C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
200
Single Pulse Power
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
–0.0
Power (W)
160
120
–0.2
80
–0.4
40
–0.6
–0.8
–50
0
–25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71823
S-20828—Rev. A, 17-Jun-02
Si4310DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
CHANNEL 1
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 10 thru 3 V
40
I
D
– Drain Current (A)
I
D
– Drain Current (A)
40
50
CHANNEL 2
Transfer Characteristics
30
30
20
20
T
C
= 150_C
10
25_C
–55_C
10
0
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
10
0
0.0
0.8
1.6
2.4
V
GS
– Gate-to-Source Voltage (V)
3.2
On-Resistance vs. Drain Current
0.015
r
DS(on)
– On-Resistance (
W
)
6500
Capacitance
C
iss
V
GS
= 4.5 V
0.009
V
GS
= 10 V
0.006
C – Capacitance (pF)
0.012
5200
3900
2600
0.003
1300
C
rss
C
oss
0.000
0
10
20
30
40
50
I
D
– Drain Current (A)
0
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
Document Number: 71823
S-20828—Rev. A, 17-Jun-02
www.vishay.com
5
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