Si9529DY
Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET
Product Summary
V
DS
(V)
N-Channel
N Channel
20
r
DS(on)
(W)
0.03 @ V
GS
= 4.5 V
0.04
@ V
GS
= 2.5 V
0.05 @ V
GS
= –4.5 V
0.074 @ V
GS
= –2.5 V
I
D
(A)
"6
"5.2
"5
"4.1
D
1
D
1
S
2
P-Channel
P Channel
–12
12
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
S
1
N-Channel MOSFET
D
2
D
2
P-Channel MOSFET
G
2
G
1
Absolute Maximum Ratings (
T
A
= 25_C Unless Otherwise Noted
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
20
"8
"6
"4.8
"20
1.7
2.0
1.3
P-Channel
–12
"8
"5
"4.0
"20
–1.7
Unit
V
A
W
–55 to 150
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70161.
Symbol
R
thJA
N- or P- Channel
62.5
Unit
_C/W
Siliconix
S-49520—Rev. D, 18-Dec-96
1
Si9529DY
Specifications (T
J
= 25_C Unless Otherwise Noted)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V V
GS
=
"8
V
V,
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –12 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= –12 V, V
GS
= 0 V, T
J
= 55_C
On State Drain Current
b
On-State
I
D( )
D(on)
V
DS
w
5 V, V
GS
= 4.5 V
V
DS
v
–5 V, V
GS
= –4.5 V
V
GS
= 4.5 V, I
D
= 6 A
Drain-Source On State
Drain Source On-State Resistance
b
r
DS( )
DS(on)
V
GS
= –4.5 V, I
D
= –5 A
V
GS
= 2.5 V, I
D
= 5.2 A
V
GS
= –2.5 V, I
D
= –4.1 A
Forward Transconductance
b
g
f
fs
V
DS
= 10 V, I
D
= 6 A
V
DS
= –9 V, I
D
= –5 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= –1.7 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
–20
0.023
0.039
0.028
0.051
24
16
0.75
–0.75
1.2
–1.2
V
S
0.03
0.05
0.04
0.074
W
A
0.6
–0.6
"100
"100
1
–1
5
–5
mA
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Gate-Body
Gate Body Leakage
I
GSS
nA
Diode Forward Voltage
b
V
SD
Dynamic
a
Total Gate Charge
Q
g
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 6 A
Gate Source Charge
Gate-Source
Q
gs
P-Channel
V
DS
= –6 V V
GS
= –4.5 V, I
D
= –5A
6 V,
45V
5A
Gate-Drain
Gate Drain Charge
Q
gd
d
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
N Ch
l
V
DD
= 10 V, R
L
=
10 W
,
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
P-Channel
V
DD
= –10 V, R
L
= 10
W
10 V
I
D
^
–1 A, V
GEN
= –4.5 V, R
G
= 6
W
1
4.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
F
= 1.7 A, di/dt = 100 A/ms
I
F
= –1.7 A, di/dt = 100 A/ms
N-Ch
P-Ch
21
21
2.9
3
6.5
6
30
20
70
40
70
100
30
60
70
67
60
40
140
80
140
200
60
120
100
100
ns
nC
40
40
Turn-On
Turn On Delay Time
t
d( )
d(on)
Rise Time
t
r
Turn-Off
Turn Off Delay Time
t
d( ff)
d(off)
Fall Time
t
f
Source-Drain
Source Drain Reverse Recovery Time
t
rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
2
Siliconix
S-49520—Rev. D, 18-Dec-96
Si9529DY
Typical Characteristics (25_C Unless Otherwise Noted)
20
N-Channel
Output Characteristics
V
GS
= 4.5, 4, 3.5, 3, 2.5 V
2V
20
Transfer Characteristics
16
15
I
D
– Drain Current (A)
12
I
D
– Drain Current (A)
10
8
5
T
C
= 125_C
25_C
4
1.5 V
1.0 V
0
0
1
2
3
4
5
0
0.5
–55_C
1.5
2.0
2.5
3.0
0
V
DS
– Drain-to-Source Voltage (V)
1.0
V
GS
– Gate-to-Source Voltage (V)
0.05
On-Resistance vs. Drain Current
3000
2500
C – Capacitance (pF)
2000
1500
1000
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.04
V
GS
= 2.5 V
V
GS
= 4.5 V
0.02
0.03
C
iss
C
oss
500
0
C
rss
0.01
0
0
5
10
I
D
– Drain Current (A)
15
20
0
2
4
6
8
10
12
V
DS
– Drain-to-Source Voltage (V)
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 6 A
Gate Charge
1.8
1.6
r
DS(on)
– On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
–50
On-Resistance vs. Junction Temperature
4
V
GS
= 4.5 V
I
D
= 6 A
3
2
1
0
0
5
10
15
20
25
Q
g
– Total Gate Charge (nC)
0
50
100
150
T
J
– Junction Temperature (_C)
Siliconix
S-49520—Rev. D, 18-Dec-96
3
Si9529DY
Typical Characteristics (25_C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
20
T
J
= 150_C
I
S
– Source Current (A)
10
r
DS(on)
– On-Resistance (
W
)
0.10
N-Channel
On-Resistance vs. Gate-to-Source Voltage
0.08
0.06
0.04
I
D
=
6
A
0.02
T
J
= 25_C
1
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
0
0
2
4
6
8
V
GS
– Gate-to-Source Voltage (V)
0.4
0.2
V
GS(th)
Variance (V)
–0.0
Threshold Voltage
30
I
D
= 250
mA
Single Pulse Power
24
Power (W)
18
–0.2
–0.4
–0.6
–0.8
–50
12
6
0
50
T
J
– Temperature (_C)
100
150
0
0.01
0.1
1
Time (sec)
10
30
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
4
Siliconix
S-49520—Rev. D, 18-Dec-96
Si9529DY
Typical Characteristics (25_C Unless Otherwise Noted)
20
P-Channel
Output Characteristics
V
GS
= 5, 4.5, 4, 3.5, 3 V
2.5 V
20
Transfer Characteristics
16
15
I
D
– Drain Current (A)
12
I
D
– Drain Current (A)
10
8
2V
5
4
T
C
= 125_C
25_C
–55_C
1.5
2.0
2.5
3.0
1V
1.5 V
0
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
0
0.5
1.0
V
GS
– Gate-to-Source Voltage (V)
0.10
On-Resistance vs. Drain Current
3000
2500
C – Capacitance (pF)
2000
1500
1000
500
0
C
rss
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.08
V
GS
= 2.5 V
V
GS
= 4.5 V
0.04
0.06
C
iss
C
oss
0.02
0
0
5
10
I
D
– Drain Current (A)
15
20
0
2
4
6
8
10
12
V
DS
– Drain-to-Source Voltage (V)
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 5 A
Gate Charge
1.8
1.6
r
DS(on)
– On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
–50
On-Resistance vs. Junction Temperature
4
V
GS
= 4.5 V
I
D
= 5 A
3
2
1
0
0
5
10
15
20
25
Q
g
– Total Gate Charge (nC)
0
50
100
150
T
J
– Junction Temperature (_C)
Siliconix
S-49520—Rev. D, 18-Dec-96
5
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