Advanced Power MOSFET
FEATURES
Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= 60V
Lower R
DS(ON)
: 0.124
Ω
(Typ.)
SSR/U3055LA
BV
DSS
= 60 V
R
DS(on)
= 0.165
Ω
I
D
= 8 A
D-PAK
2
1
3
1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C) *
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
o
o
2
O
1
O
1
O
3
O
o
o
Value
60
8
5
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
28
+
20
_
55
8
1.8
5.5
2.5
18
0.14
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
6.73
50
110
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
SSR/U3055LA
Symbol
BV
DSS
∆BV/∆T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
Min. Typ. Max. Units
60
--
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.046
--
--
--
--
--
--
4.7
265
100
37
10
16
21
15
7.2
2.6
3.2
--
--
2.0
100
-100
10
100
0.165
--
345
115
45
30
45
55
40
10
--
--
nC
ns
pF
µA
Ω
Ω
V
o
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Test Condition
V
GS
=0V,I
D
=250µA
See Fig 7
V
DS
=5V,I
D
=250µA
V
GS
=20V
V
GS
=--20V
V
DS
=60V
V
DS
=48V,T
C
=125 C
V
GS
=5V,I
D
=4A
V
DS
=30V,I
D
=4A
4
O
4
O
o
V/ C I
D
=250µA
V
nA
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
V
DD
=30V,I
D
=10A,
R
G
=12
Ω
See Fig 13
V
DS
=48V,V
GS
=5V,
I
D
=10A
See Fig 6 & Fig 12
4
5
OO
4
5
OO
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1
O
4
O
Min. Typ. Max. Units
--
--
--
--
--
--
--
--
50
0.075
8
28
1.5
--
--
A
V
ns
µC
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25 C,I
S
=8A,V
GS
=0V
T
J
=25 C,I
F
=10A
di
F
/dt=100A/µs
4
O
o
o
Notes ;
1
O
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
o
2
O
L=1mH, I
AS
=8A, V
DD
=25V, R
G
=27Ω, Starting T
J
=25 C
o
_
_
_
3
O
I
SD
<
10A, di/dt
<
200A/µs, V
DD
<
BV
DSS
, Starting T
J
=25 C
_
4
O
Pulse Test : Pulse Width = 250
µs,
Duty Cycle
<
2%
5
O
Essentially Independent of Operating Temperature
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V
GS
SSR/U3055LA
Fig 2. Transfer Characteristics
[A]
10
1
I
D
, Drain Current
[A]
Top :
10
1
I
D
, Drain Current
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
150
o
C
10
0
25
o
C
@ Notes :
1. V = 0 V
GS
2. V = 30 V
DS
3. 250
µ
s Pulse Test
10
0
@ Notes :
1. 250
µ
s Pulse Test
2. T = 25
o
C
C
0
10
- 55
o
C
10
-1
10
1
10
-1
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
[A]
V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
R
DS(on)
, [ ]
Ω
Drain-Source On-Resistance
0.25
Fig 4. Source-Drain Diode Forward Voltage
0.20
V
GS
= 5 V
I
DR
, Reverse Drain Current
10
1
0.15
0.10
V
GS
= 10 V
0.05
@ Note : T = 25
o
C
J
0.00
0
10
20
30
40
10
0
150
o
C
25
o
C
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
@ Notes :
1. V = 0 V
GS
2. 250
µ
s Pulse Test
1.6
1.8
2.0
2.2
2.4
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
50
0
Fig 5. Capacitance vs. Drain-Source Voltage
C
iss
= C
gs
+ C ( C
ds
= s o t d )
hre
gd
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
6
[pF]
V
GS
, Gate-Source Voltage
40
0
C
iss
C
oss
V
DS
= 1 V
2
V
DS
= 30 V
V
DS
= 48 V
4
Capacitance
30
0
20
0
C
rss
@Nts:
oe
1 V
GS
= 0 V
.
2 f=1Mz
.
H
2
10
0
@ N t s : I
D
= 0 A
oe
1
0
0
2
4
6
8
0
10
0
1
1
0
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
SSR/U3055LA
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
1.2
N-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
Fig 7. Breakdown Voltage vs. Temperature
2.0
1.1
1.5
1.0
1.0
@ Notes :
1. V = 5 V
GS
2. I = 4.8 A
D
0.5
-75
0.9
@ Notes :
1. V = 0 V
GS
2. I = 250
µ
A
D
0.8
-75
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Fig 9. Max. Safe Operating Area
[A]
10
2
Operation in This Area
is Limited by R
DS(on)
10
Fig 10. Max. Drain Current vs. Case Temperature
[A]
0.1 ms
I
D
, Drain Current
I
D
, Drain Current
10
2
8
10
1
1 ms
10 ms
@ Notes :
1. T = 25
o
C
C
2. T = 150
o
C
J
3. Single Pulse
DC
6
4
10
0
2
10
-1
10
0
10
1
0
25
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
c
, Case Temperature [ C]
Fig 11. Thermal Response
10
1
Thermal Response
D=0.5
0.2
10
0
0.1
0.05
0.02
0.01
single pulse
10
- 1
@ Notes :
1. Z
θ
J C
(t)=6.73
o
C/W Max.
2. Duty Factor, D=t /t
2
1
3. T
J M
-T
C
=P
D M
*Z
θ
J C
(t)
Z
θ
JC
(t) ,
P
DM
t
1
t
2
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
t
1
, Square Wave Pulse Duration
[sec]
N-CHANNEL
POWER MOSFET
SSR/U3055LA
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
GS
Q
g
5V
V
DS
V
GS
DUT
3mA
Q
gs
Q
gd
R
1
Current Sampling (I
G
)
Resistor
R
2
Current Sampling (I
D
)
Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
R
L
V
out
V
in
R
G
DUT
5V
V
in
10%
V
out
V
DD
( 0.5 rated V
DS
)
90%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
L
V
DS
Vary t
p
to obtain
required peak I
D
BV
DSS
1
2
--------------------
E
AS
= ---- L
L
I
AS
2
BV
DSS
-- V
DD
BV
DSS
I
AS
C
V
DD
V
DD
t
p
I
D
R
G
DUT
5V
t
p
I
D
(t)
V
DS
(t)
Time
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