Datasheet> 器件分类 > 分立半导体> 二极管> RBV802

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RBV802: 产品描述SILICON BRIDGE RECTIFIERS; 产品类别分立半导体二极管; 文件大小41KB，共2页; 制造商EIC [EIC discrete Semiconductors]; 标准

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RBV802概述

SILICON BRIDGE RECTIFIERS

RBV802规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	EIC [EIC discrete Semiconductors]
包装说明	R-PSFM-T4
Reach Compliance Code	compli
其他特性	HIGH RELIABILITY
最小击穿电压	200 V
外壳连接	ISOLATED
配置	BRIDGE, 4 ELEMENTS
二极管元件材料	SILICON
二极管类型	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)	1 V
JESD-30 代码	R-PSFM-T4
最大非重复峰值正向电流	300 A
元件数量	4
相数	1
端子数量	4
最高工作温度	150 °C
最低工作温度	-40 °C
最大输出电流	8 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
参考标准	TS 16949
最大重复峰值反向电压	200 V
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE

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RBV800 - RBV810

PRV : 50 - 1000 Volts

Io : 8.0 Amperes

FEATURES :

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

High case dielectric strength of 2000 V

Ideal for printed circuit board

Very good heat dissipation

Pb / RoHS Free

SILICON BRIDGE RECTIFIERS

RBV25

3.9

0.2

0.3

4.9

0.2

∅

3.2

0.1

0.3

13.5

0.3

~ ~

0.2

1.0

0.1

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 7.97 grams ( Approximaly )

Rating at 25

°C

ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

10 7.5 7.5

±0.2 ±0.2 ±0.2

2.0

0.2

0.7

0.1

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

Maximum Forward Voltage per Diode at I

= 4.0 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

Ta = 25

°C

Ta = 100

°C

SYMBOL

RBV

800

RBV

801

100

RBV

802

200

140

200

RBV

804

400

280

400

8.0

RBV

806

600

420

600

RBV

808

800

560

800

17.5

0.5

RBV

810

1000

700

1000

UNIT

µA

°C/W

°C

RRM

RMS

F(AV)

FSM

R(H)

STG

300

160

1.0

200

2.5

- 40 to + 150

Notes :

1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.

Page 1 of 2

Rev. 03 : September 9, 2005

RBV802相似产品对比

	RBV802	RBV800	RBV800_05	RBV801	RBV804	RBV806	RBV808	RBV810
描述	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS	SILICON BRIDGE RECTIFIERS
是否无铅	不含铅	不含铅	-	不含铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	-	符合	符合	符合	符合	符合
厂商名称	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
包装说明	R-PSFM-T4	R-PSFM-T4	-	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Reach Compliance Code	compli	compli	-	compli	compli	compli	compli	compli
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
最小击穿电压	200 V	50 V	-	100 V	400 V	600 V	800 V	1000 V
外壳连接	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
二极管元件材料	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)	1 V	1 V	-	1 V	1 V	1 V	1 V	1 V
JESD-30 代码	R-PSFM-T4	R-PSFM-T4	-	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
最大非重复峰值正向电流	300 A	300 A	-	300 A	300 A	300 A	300 A	300 A
元件数量	4	4	-	4	4	4	4	4
相数	1	1	-	1	1	1	1	1
端子数量	4	4	-	4	4	4	4	4
最高工作温度	150 °C	150 °C	-	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-40 °C	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
最大输出电流	8 A	8 A	-	8 A	8 A	8 A	8 A	8 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
参考标准	TS 16949	TS 16949	-	TS 16949	TS 16949	TS 16949	TS 16949	TS 16949
最大重复峰值反向电压	200 V	50 V	-	100 V	400 V	600 V	800 V	1000 V
表面贴装	NO	NO	-	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE

RBV802

RBV802概述

RBV802规格参数

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