TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
SMS1A - SMS1M
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
*
*
*
*
*
*
*
Glass passivated junction chip
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Super fast recovery time
Pb Free / RoHS Compliant
SURFACE MOUNT
SUPER FAST RECTIFIERS
SOD-123FL
2.5(0.098)
2.9(0.114)
1.55(0.061)
1.95(0.077)
0.6(0.024)
1.0(0.039)
FEATURES :
MECHANICAL DATA :
* Case: JEDEC SOD-123FL, molded plastic
over passivated chip
* Terminals: Solder Plated, solderable per
MIL-STD-750, Method 2026
* Polarity: Color band denotes cathode end
* Mounting position : Any
* Weight: 0.02 gram (Approximate)
0.5(0.020)
1.1(0.043)
max0.1(0.004)
3.5(0.138)
3.9(0.154)
0.8(0.031)
1.2(0.047)
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Marking
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 55
°C
Maximum Peak Forward Surge Current
8.3 ms. Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL SMS1A SMS1B SMS1D SMS1G SMS1J SMS1K SMS1M UNIT
SA
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
C
J
T
J
T
STG
0.95
5.0
35
50
- 65 to + 150
- 65 to + 150
30
1.7
4.0
10
50
35
50
SB
100
70
100
SD
200
140
200
SG
400
280
400
SJ
600
420
600
SK
800
560
800
SM
1000
700
1000
V
V
V
A
A
0.05(0.002)
0.25(0.010)
V
μA
ns
pF
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 01 : January 12, 2009
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( SMS1A - SMS1M )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
Ω
10
Ω
+ 0.5 A
Trr
+
D.U.T.
50 Vdc
(approx)
1
Ω
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
0
- 0.25 A
- 1.0 A
SET TIME BASE FOR 15 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE CURRENT
AVERAGE FORWARD CURRENT, (A)
1.0
30
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, (A)
0.8
24
8.3 ms SINGLE HALF = 50
°C
Ta SINE WAVE
0.6
18
0.4
12
0.2
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
6
0
1
2
4
6
10
20
40
60 100
AMBIENT TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
SMS1G-J
10
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE
CURRENT, (µA)
SMS1A -D
T
J
= 100
°C
10
SMS1K -M
1.0
1.0
0.1
T
J
= 25
°C
0.1
Pulse Width = 300μs
2% Duty Cycle
T
J
= 25
°C
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE VOLTAGE,
(%)
FORWARD VOLTAGE, (V)
Page 2 of 2
Rev. 01 : January 12, 2009
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