TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
SME1A -SME1M
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
*
Glass passivated junction chip
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb Free / RoHS Compliant
SURFACE MOUNT
HIGH EFFICIENT RECTIFIERS
SOD-123FL
2.5(0.098)
2.9(0.114)
1.55(0.061)
1.95(0.077)
0.6(0.024)
1.0(0.039)
MECHANICAL DATA :
* Case: JEDEC SOD-123FL, molded plastic
over passivated chip
* Terminals: Solder Plated, solderable per
MIL-STD-750, Method 2026
* Polarity: Color band denotes cathode end
* Mounting position : Any
* Weight: 0.02 gram (Approximate)
0.5(0.020)
1.1(0.043)
max0.1(0.004)
3.5(0.138)
3.9(0.154)
0.8(0.031)
1.2(0.047)
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Marking
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Ta = 55
°C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL SME1A SME1B SME1D SME1E SME1G SME1J SME1K SME1M UNIT
EA
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Trr
C
J
T
J
T
STG
50
50
- 65 to + 150
- 65 to + 150
1.1
5.0
50
75
50
35
50
EB
100
70
100
ED
200
140
200
EE
300
210
300
1.0
30
EG
400
280
400
EJ
600
420
600
EK
800
560
800
EM
1000
700
1000
V
V
V
A
A
1.7
0.05(0.002)
0.25(0.010)
2.2
V
µA
µA
ns
pF
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 01 : January 12, 2009
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( SME1A - SME1M )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
Ω
10
Ω
+ 0.5 A
D.U.T.
50 Vdc
(approx)
1
Ω
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
0
- 0.25 A
Trr
+
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
1.0
30
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, AMPERES
0.8
24
8.3 ms SINGLE HALF SINE WAVE
Ta = 50
°C
0.6
18
0.4
12
0.2
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
6
0
1
2
4
6
10
20
40
60 100
AMBIENT TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
10
T
J
= 100
°C
FORWARD CURRENT, AMPERES
10
SME1A-SME1G
REVERSE CURRENT,
MICROAMPERES
SME1J-SEM1K
1.0
1.0
SME1M
0.1
T
J
= 25
°C
0.1
T
J
= 25
°C
Pulse Width = 300
μs
2% Duty Cycle
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
3.3
0.01
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : January 12, 2009
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
