UNISONIC TECHNOLOGIES CO., LTD
BD139
NPN POWER TRANSISTORS
FEATURES
NPN SILICON TRANSISTOR
* High current (max.1.5A)
* Low voltage (max.80V)
ORDERING INFORMATION
Pin Assignment
1
2
3
E
C
B
E
C
B
B
C
E
Packing
Bulk
Bulk
Tube
Ordering Number
Package
Lead Free
Halogen Free
BD139L-xx-T60-K
BD139G-xx-T60-K
TO-126
BD139L-xx-T6S-K
BD139G-xx-T6S-K
TO-126S
BD139L-xx-TM3-T
BD139G-xx-TM3-T
TO-251
Note: Pin Assignment: E: Emitter C: Collector B: Base
BD139L-xx-T60-K
(1)Packing Type
(2)Package Type
(3)Rank
(4)Green Package
(1) K: Bulk, T: Tube
(2) T60: TO-126, T6S: TO-126S, TM3: TO-251
(3) refer to h
FE
(4) L: Lead Free, G: Halogen Free and Lead Free
MARKING
TO-126 / TO-126S
TO-251
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R204-007.E
BD139
ABSOLUTE MAXIMUM RATING
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
l
BM
TO-126/ TO-126S
TO-251
P
D
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
Power Dissipation (Ta=25°C)
NPN SILICON TRANSISTOR
RATINGS
100
80
5
1.5
2
1
1.25
1
Junction Temperature
T
J
+150
Operating Temperature
T
OPR
-65~+150
Storage Temperature
T
STG
-65~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNIT
V
V
V
A
A
A
W
W
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
I
CBO
I
EBO
TEST CONDITIONS
I
E
=0, V
CB
=30V
I
E
=0, V
CB
=30V, T
J
=125°C
I
C
=0, V
EB
=5V
I
C
=5mA
V
CE
=2V (See Fig.1) I
C
=150mA
I
C
=500mA
I
C
=150mA, V
CE
=2V (See Fig.1)
V
CE(SAT)
V
BE
f
T
I
C
=500 mA, I
B
=50mA
I
C
=500 mA, V
CE
=2V
I
C
=500 mA, V
CE
=5V, f=100MHz
MIN
TYP MAX UNIT
100 nA
10
μA
100 nA
250
160
250
0.5
1
190
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
h
FE
BD139-10
BD139-16
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
DC Current Gain
40
63
25
63
100
V
V
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-007.E
BD139
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current, I
C
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
DC Current Gain, h
FE
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QW-R204-007.E
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