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SS14LHRV

产品描述Rectifier Diode
产品类别分立半导体    二极管   
文件大小199KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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SS14LHRV概述

Rectifier Diode

SS14LHRV规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
Reach Compliance Codecompliant
ECCN代码EAR99
二极管类型RECTIFIER DIODE
JESD-609代码e3
湿度敏感等级1
峰值回流温度(摄氏度)260
端子面层Matte Tin (Sn)
处于峰值回流温度下的最长时间30

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SS12L thru SS115L
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Schottky Barrier Rectifier
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.5A
@ 1.0A
Maximum reverse current @ rated VR T
J
=25
T
J
=100
T
J
=125
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
SYMBOL
SS
12L
12L
20
14
20
SS
13L
13L
30
21
30
SS
14L
14L
40
28
40
SS
15L
15L
50
35
50
1
30
SS
16L
16L
60
42
60
SS
19L
19L
90
63
90
SS
10L
100
70
100
SS
A5L
150
105
150
V
V
V
A
A
110L 115L
UNIT
V
F
0.385
0.45
0.43
0.50
0.51
0.55
0.4
0.58
0.70
0.70
0.80
0.05
0.75
0.90
V
I
R
dV/dt
R
θJL
R
θJA
T
J
T
STG
8.0
-
6.0
10000
45
100
- 55 to +125
- 55 to +150
- 55 to +150
-
0.5
mA
V/μs
O
C/W
O
O
C
C
Document Number: DS_D1308028
Version: N13

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