1
CY7C261
CY7C263/CY7C264
8K x 8 Power-Switched and Reprogrammable PROM
Features
• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
— 20 ns (Commercial)
— 25 ns (Military)
• Low power
— 660 mW (Commercial)
— 770 mW (Military)
• Super low standby power (7C261)
— Less than 220 mW when deselected
•
•
•
•
•
•
— Fast access: 20 ns
EPROM technology 100% programmable
Slim 300-mil or standard 600-mil packaging available
5V
±
10% V
CC
, commercial and military
Capable of withstanding greater than 2001V static
discharge
TTL-compatible I/O
Direct replacement for bipolar PROMs
the CY7C261 automatically powers down into a low-power
standby mode. It is packaged in a 300-mil-wide package. The
CY7C263 and CY7C264 are packaged in 300-mil-wide and
600-mil-wide packages respectively, and do not power down
when deselected. The reprogrammable packages are
equipped with an erasure window; when exposed to UV light,
these PROMs are erased and can then be reprogrammed.
The memory cells utilize proven EPROM floating-gate
technology and byte-wide intelligent programming algorithms.
The CY7C261, CY7C263, and CY7C264 are plug-in replace-
ments for bipolar devices and offer the advantages of lower
power, superior performance and programming yield. The
EPROM cell requires only 12.5V for the supervoltage and low
current requirements allow for gang programming. The
EPROM cells allow for each memory location to be tested
100%, as each location is written into, erased, and repeatedly
exercised prior to encapsulation. Each PROM is also tested
for AC performance to guarantee that after customer
programming the product will meet DC and AC specification
limits.
Read is accomplished by placing an active LOW signal on CS.
The contents of the memory location addressed by the
address line (A
0
−A
12
) will become available on the output lines
(O
0
−O
7
).
Functional Description
The CY7C261, CY7C263, and CY7C264 are high-perfor-
mance 8192-word by 8-bit CMOS PROMs. When deselected,
Logic Block Diagram
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
O
1
POWER DOWN
(7C261)
COLUMN
ADDRESS
O
3
ADDRESS
DECODER
O
4
O
5
ROW
ADDRESS
PROGRAM-
MABLE
ARRAY
COLUMN
MULTI-
PLEXER
O
7
Pin Configurations
DIP/Flatpack
Top View
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8 7C261 17
7C263
9 7C264 16
10
15
11
14
12
13
V
CC
A
8
A
9
A
10
CS
A
11
A
12
O
7
O
6
O
5
O
4
O
3
O
6
LCC/PLCC (OpaqueOnly)
Top View
4 3 2 1 28 27 26
25
5
24
6
23
7C261
7
22
8
7C263
21
9
20
10
19
11
12 1314151617 18
O1
O2
GND
NC
O3
O4
O5
A5
A6
A7
NC
VCC
A8
A9
A
4
A
3
A
2
A
1
A
0
NC
O
0
A
10
CS
A
11
A
12
NC
O
7
O
6
O
2
O
0
CS
For an 8K x 8 Registered PROM, see theCY7C265.
Cypress Semiconductor Corporation
Document #: 38-04010 Rev. *B
•
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised December 28, 2002
CY7C261
CY7C263/CY7C264
Selection Guide
7C261-20
7C263-20
7C264-20
Maximum Access Time
Maximum Operating
Current
Maximum Standby
Current (7C261 only)
Commercial
Military
Commercial
Military
40
20
120
7C261-25
7C263-25
7C264-25
25
120
140
40
40
7C261-35
7C263-35
7C264-35
35
100
120
30
30
7C261-45
7C263-45
7C264-45
45
100
120
30
30
7C261-55
7C263-55
7C264-55
55
100
120
30
30
Unit
ns
mA
mA
mA
mA
Maximum Ratings
[1]
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperatures .................................–65°C to+150°C
Ambient Temperature with
Power Applied..............................................–55°C to+125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12) ............................................ –0.5V to+7.0V
DC Voltage Applied to Outputs
in High Z State ................................................ –0.5V to+7.0V
DC Input Voltage........................................... –3.0V to + 7.0V
DC Program Voltage
(Pin 19 DIP, Pin 23 LCC) ..............................................13.0V
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
UV Exposure ................................................ 7258 Wsec/cm
2
Operating Range
Range
Commercial
Military
[2]
Ambient
Temperature
0
°
C to + 70
°
C
–55
°
C to + 125
°
C
V
CC
5V
±
10%
5V
±
10%
Notes:
1. The volatge on any input or I/O pin cannot exceed the power pin during
power-up.
2. T
A
is the “instant on” case temperature.
Document #: 38-04010 Rev. *B
Page 2 of 14
CY7C261
CY7C263/CY7C264
Electrical Characteristics
Over the Operating Range
[3,4]
7C261-20, 25
7C263-20, 25
7C264-20, 25
Parameter
V
OH
V
OH
V
OL
V
OL
V
IH
V
IL
I
IX
V
CD
I
OZ
I
OS
I
CC
I
SB
V
PP
I
PP
V
IHP
V
ILP
Description
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Level
Input LOW Level
Input Current
Input Diode Clamp Voltage
Output Leakage Current
Output Short Circuit Current
[5]
Power Supply Current
Standby Supply Current (7C261)
Programming Supply Voltage
Programming Supply Current
Input HIGH Programming Voltage
Input LOW Programming Voltage
4.75
0.4
GND < V
OUT
< V
CC
Output Disabled
Com’l
Mil
Com’l
Mil
Com’l
Mil
12
GND < V
IN
< V
CC
–10
–10
–40
–20
Test Conditions
V
CC
= Min., I
OH
= –2.0 mA
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8 mA
(6 mA Mil)
V
CC
= Min., I
OL
= 16 mA
2.0
0.8
+10
+10
+40
–90
120
140
40
40
13
50
4.75
0.4
12
–10
Note 4
–10
–40
–20
+10
+40
–90
100
120
30
30
13
50
V
mA
V
V
mA
µA
µA
mA
mA
Note 4
2.0
0.8
+10
0.4
0.4
Min.
2.4
2.4
Max.
7C261-35, 45, 55
7C263-35, 45, 55
7C264-35, 45, 55
Min.
Max.
Unit
V
V
V
V
V
V
µA
V
CC
= Max., V
OUT
= GND
V
CC
= Max., f = Max.
I
OUT
= 0 mA
V
CC
= Max.,
CS > V
IH
Capacitance
[4]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
10
10
Unit
pF
pF
Notes:
3. See the last page of this specification for Group A subgroup testing information.
4. See the “Introduction to CMOS PROMs” section of the Cypress Data Book for general information on testing.
5. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.]
Document #: 38-04010 Rev. *B
Page 3 of 14
CY7C261
CY7C263/CY7C264
AC Test Loads and Waveforms
[4]
Test Load for -20 through -30 speeds
R1 500
(658Ω MIL)
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
R2 333Ω
(403Ω MIL)
5 pF
INCLUDING
JIG AND
SCOPE
R2 333Ω
(403Ω MIL)
R1 500Ω
(658Ω MIL)
3.0V
GND
≤
5 ns
90%
10%
90%
10%
≤
5 ns
(a) Normal Load
Equivalent to:
(b) High Z Load
THÉVENIN EQUIVALENT
R
TH
200Ω (250Ω MIL)
OUTPUT
2.0V(1.9VMIL)
Test Load for -35 through -55 speeds
R1250
Ω
5V
OUTPUT
30pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
R2167
Ω
5 pF
INCLUDING
JIG AND
SCOPE
R2167
Ω
R1 250Ω
(c) Normal Load
Equivalent to:
THÉVENIN EQUIVALENT
R
TH
100Ω
2.0V
(d) High Z Load
OUTPUT
Switching Characteristics
Over the Operating Range
[1,3,4
]
7C261-20
7C263-20
7C264-20
Parameter
t
AA
t
HZCS1
t
HZCS2
t
ACS1
t
ACS2
t
PU
t
PD
Description
Address to Output Valid
Chip Select Inactive to High Z
(7C263 and 7C264)
Chip Select Inactive to High Z
(7C261)
Chip Select Active to Output Valid
(7C263 and 7C264)
Chip Select Active to Output Valid
(7C261)
Chip Select Active to Power-Up
(7C261)
Chip Select Inactive to
Power-Down (7C261)
0
20
Min.
Max.
20
12
20
12
20
0
25
7C261-25
7C263-25
7C264-25
Min.
Max.
25
12
25
12
25
0
35
7C261-35
7C263-35
7C264-35
Min.
35
20
35
20
35
0
45
7C261-45
7C263-45
7C264-45
Max.
45
30
45
30
45
0
55
7C261-55
7C263-55
7C264-55
Min.
Max.
55
35
55
35
55
Unit
ns
ns
ns
ns
ns
ns
ns
Max. Min.
Document #: 38-04010 Rev. *B
Page 4 of 14
CY7C261
CY7C263/CY7C264
Switching Waveforms
[4]
t
PD
50%
t
PU
50%
V
CC
SUPPLY
CURRENT
A
0
- A
12
ADDRESS
CS
t
AA
O
0
- O
7
t
HZCS
t
ACS
Erasure Characteristics
Wavelengths of light less than 4000 angstroms begin to erase
the devices in the windowed package. For this reason, an
opaque label should be placed over the window if the PROM
is exposed to sunlight or fluorescent lighting for extended
periods of time.
The recommended dose of ultraviolet light for erasure is a
wavelength of 2537 angstroms for a minimum dose (UV
intensity multiplied by exposure time) of 25 Wsec/cm
2
. For an
ultraviolet lamp with a 12 mW/cm
2
power rating, the exposure time
would be approximately 35 minutes. The 7C261 or 7C263
needs to be within 1 inch of the lamp during erasure.
Permanent damage may result if the PROM is exposed to
high-intensity UV light for an extended period of time. 7258
Wsec/cm
2
is the recommended maximum dosage.
Operating Modes
Read
Read is the normal operating mode for programmed device. In
this mode, all signals are normal TTL levels. The PROM is
addressed with a 13-bit field, a chip select, (active LOW), is
applied to the CS pin, and the contents of the addressed location
appear on the data out pins.
Program, Program Inhibit, Program Verify
These modes are entered by placing a high voltage V
PP
on pin
19, with pins 18 and 20 set to V
ILP
. In this state, pin 21 becomes a
latch signal, allowing the upper 5 address bits to be latched into an
onboard register, pin 22 becomes an active LOW program (PGM)
signal and pin 23 becomes an active LOW verify (VFY) signal. Pins
22 and 23 should never be active LOW at the same time. The
PROGRAM mode exists when PGM is LOW, and VFY is HIGH. The
verify mode exists when the reverse is true, PGM HIGH and VFY
LOW and the program inhibit mode is entered with both PGM and
VFY HIGH. Program inhibit is specifically provided to allow data to be
placed on and removed from the data pins without conflict
Table 1. Mode Selection
Pin Function
[6, 7]
Read or Output Disable
Mode
Read
Output Disable
Program
Program Inhibit
Program Verify
Blank Check
Program
A
12
NA
A
12
A
12
V
ILP
V
ILP
V
ILP
V
ILP
A
11
V
PP
A
11
A
11
V
PP
V
PP
V
PP
V
PP
A
10
LATCH
A
10
A
10
V
ILP
V
ILP
V
ILP
V
ILP
A
9
PGM
A
9
A
9
V
ILP
V
IHP
V
IHP
V
IHP
A
8
VFY
A
8
A
8
V
IHP
V
IHP
V
ILP
V
ILP
CS
CS
V
IL
V
IH
V
ILP
V
ILP
V
ILP
V
ILP
O
7
–O
0
D
7
–D
0
O
7
–O
0
High Z
D
7
–D
0
High Z
O
7
–O
0
O
7
–O
0
Notes:
6. X = “don’t care” but not to exceed V
CC
±5%.
7. Addresses A
8
-A
12
must be latched through lines A
0
-A
4
in programming modes.
Document #: 38-04010 Rev. *B
Page 5 of 14
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