INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 7 September 2004.
MIL-PRF-19500/477F
7 June 2004
SUPERSEDING
MIL-PRF-19500/477E
30 December 2002
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,
TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811,
1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for silicon, fast recovery, power rectifier
diodes. Four levels of product assurance are provided for each encapsulated device types as specified in
PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figures 1 through 6.
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
1.3.1 Ratings applicable to all Part or Identifying Numbers (PIN). T
STG
= T
J(max)
=-65°C to +175°C; (sinewave
operation includes package limitation).
1.3.2 Ratings applicable to individual types.
Col. 1
Types
Col. 2
V
RWM
Col. 3
I
O1
T
L
= +75°C
L = .375 in.
(9.52 mm)
(1)
2.5 A (4)
2.5 A (4)
2.5 A (4)
6.0 A (6)
6.0 A (6)
6.0 A (6)
Col. 4
I
O2
T
A
=
+55°C
(2)
1.0 A (5)
1.0 A (5)
1.0 A (5)
3.0 A (7)
3.0 A (7)
3.0 A (7)
Col. 5
I
FSM
at
+25°C
Operating
at I
O2
t
p
= 8.3 ms
35 A(pk)
35 A(pk)
35 A(pk)
125 A(pk)
125 A(pk)
125 A(pk)
Col. 6
t
rr
Col. 7
R
θJL
at
L = .375
in.
(9.52
mm)
36°C/W
36°C/W
36°C/W
22°C/W
22°C/W
22°C/W
Col. 8
R
θJEC
(3)
Col. 9
Z
θJX
MIL-
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1N5802, 1N5802US
1N5804, 1N5804US
1N5806, 1N5806US
1N5807, 1N5807US
1N5809, 1N5809US
1N5811, 1N5811US
See notes on next page.
50
100
150
50
100
150
25 ns
25 ns
25 ns
30 ns
30 ns
30 ns
20°C/W
20°C/W
20°C/W
10°C/W
10°C/W
10°C/W
4.5°C/W
4.5°C/W
4.5°C/W
1.5°C/W
1.5°C/W
1.5°C/W
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/477F
1.3.2 Ratings applicable to individual types - Continued.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
T
EC
= T
L
at L = 0 or T
end tab
for US suffix devices.
This rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently
controlled where T
STG
and T
J(max)
in 1.3.1 are not exceeded.
US suffix devices only.
Derate at 25 mA/°C for T
L
above +75°C.
Derate at 8.33 mA/°C for T
A
above +55°C.
Derate at 60 mA/°C for T
L
above +75°C.
Derate at 25 mA/°C for T
A
above +55°C.
1.4 Primary electrical characteristics. Unless otherwise specified, T
A
= +25°C.
Types
V
BR
(V dc)
1N5802, 1N5802US
1N5804, 1N5804US
1N5806, 1N5806US
1N5807, 1N5807US
1N5809, 1N5809US
1N5811, 1N5811US
60
110
160
60
110
160
I
R1
at V
R
= V
RWM
T
A
= +25°C
µA
dc
1.0
1.0
1.0
5.0
5.0
5.0
I
R2
at V
R
= V
RWM
T
A
= +100°C
µA
dc
50
50
50
150
150
150
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
*
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/477F
Ltr.
BD
BL
LD
LL
Dimensions
1N5802, 1N5804, 1N5806
1N5807, 1N5809, 1N5811
Inches
Millimeters
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
.065 .085
1.65
2.16
.115
.165
2.92
4.19
.125 .250
3.18
6.35
.130
.300
3.30
7.62
.027 .032
0.69
0.81
.037
.042
0.94
1.07
.700 1.30
17.78
33.02
.900
1.30
22.86
33.02
Notes
4
3
3
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension LD shall include the sections of the lead over which the diameter is uncontrolled.
This uncontrolled area is defined as the zone between the edge of the diode body and extending
.050 inch (1.27 mm) onto the leads.
4. Dimension BD shall be measured at the largest diameter.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 1. Physical dimensions.
3
MIL-PRF-19500/477F
Dimensions
D-5A
1N5802US, 1N5804US,
1N5806US
Inches
Millimeters
Min
Max
Min
Max
.091
.103
2.31
2.62
.168
.200
4.27
5.08
.019
.028
0.48
0.71
.003
0.80
D-5B
1N5807US, 1N5809US,
1N5811US
Inches
Millimeters
Min
Max
Min
Max
.137
.148
3.48
3.76
.200
.225
5.08
5.72
.019
.028
0.48
0.71
.003
0.80
Ltr.
BD
BL
ECT
S
Notes
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Gap not controlled, shape of body and gap not controlled.
4. Dimensions are pre-solder dip.
5. Cathode marking to be either in color band, three dots spaced equally, or a color dot on the face of
the end tab.
6. Color dots will be .020 inch (0.51 mm) diameter minimum and those on the face of the end tab
shall not lie within .020 inch (0.51 mm) of the mounting surface.
7. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 2. Physical dimensions of surface mount family.
4
MIL-PRF-19500/477F
1N5802, 1N5804, 1N5806
Dimensions
Ltr
A
B
C
Min
.039
.031
.008
Inches
Max
.043
.035
.012
Min
1.00
0.79
0.20
Millimeters
Max
1.09
0.89
0.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Anode is aluminum at 45,000 Å minimum.
4. Cathode is gold at 2,500 Å minimum.
FIGURE 3. JANC (E-version) die dimensions.
5
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