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SBL1030CT

产品描述10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别分立半导体    二极管   
文件大小114KB,共2页
制造商EIC [EIC discrete Semiconductors]
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SBL1030CT概述

10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB

SBL1030CT规格参数

参数名称属性值
是否无铅不含铅
厂商名称EIC [EIC discrete Semiconductors]
Reach Compliance Codecompli

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Certificate TH97/10561QM
Certificate TW00/17276EM
SBL1030CT ~ SBL1040CT
PRV : 30 ~ 40 Volts
Io : 10 Amperes
FEATURES :
* Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
* Dual rectifier construction, positive center tap
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
* Guardring for overvoltage protection
* For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
* Pb / RoHS Free
DUAL SCHOTTKY
BARRIER RECTIFIERS
TO-220AB
0.154(3.91)DIA.
0.148(3.74)
0.415(10.54)MAX. 0.055(1.39)
0.045(1.14)
0.113(2.87)
0.103(2.62)
0.145(3.68)
0.135(3.43)
0.635(16.13)
0.625(15.87)
1 2 3
PIN 1
PIN 2
CASE
PIN 3
0.205(520)
0.195(4.95)
0.037(0.94)
0.027(0.68)
0.105(2.67)
0.095(2.41)
0.160(4.06)
0.140(3.56)
0.560(14.22)
0.530(13.46)
0.350(8.89)
0.330(8.39)
0.185(4.70)
0.175(4.44)
0.603(15.32)
0.573(14.55)
MECHANICAL DATA :
* Case : JEDEC TO-220AB molded plastic body
* Terminals: Plated leads, solderable per
MIL-STD-750 Method 2026
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
0.022(0.56)
0.014(0.36)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
C
= 107 °C
superimposed on rated load (JEDEC Method) Per leg
Maximum Instantaneous Forward Voltage at 5.0A (Note 1)
Maximum Instantaneous Reverse Current
Per leg at Rate DC Blocking Voltage (Note 1)
T
C
= 25 °C
T
C
= 100 °C
Total device
Per leg
( Tc = 25 °C unless otherwise noted
)
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
V
F
I
R
R
θJC
T
J
, T
STG
SBL1030CT
30
21
30
10
5.0
175
0.55
0.5
50
3.0
SBL1040CT
40
28
40
UNIT
V
V
V
A
Peak Forward Surg Current, 8.3 ms single half sine-wave
A
V
mA
°C/W
°C
Typical Thermal Resistance (Junction to Case) Per Leg
Operating Junction and Storage Temperature Range
Note :
(1) Pulse test : 300 µs pluse width, 1% duty cycle
-40 to + 125
Page 1 of 2
Rev. 01 : March 7, 2006

SBL1030CT相似产品对比

SBL1030CT SBL1040CT
描述 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
厂商名称 EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli

 
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