EDO DRAM, 4MX4, 70ns, CMOS, CDSO24, GULLWING, CERAMIC PACKAGE-28/24
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Micross |
| 零件包装代码 | SOIC |
| 包装说明 | SOP, SOP24/28,.56 |
| 针数 | 24 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | FAST PAGE WITH EDO |
| 最长访问时间 | 70 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-CDSO-G24 |
| JESD-609代码 | e0 |
| 长度 | 20.955 mm |
| 内存密度 | 16777216 bit |
| 内存集成电路类型 | EDO DRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 24 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 4MX4 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | SOP |
| 封装等效代码 | SOP24/28,.56 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 2048 |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 4.1402 mm |
| 自我刷新 | NO |
| 最大待机电流 | 0.001 A |
| 最大压摆率 | 0.11 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 11.303 mm |
| AS4LC4M4ECG-7/883C | AS4LC4M4ECJ-7/883C | AS4LC4M4EC-6/883C | AS4LC4M4EC-7/883C | AS4LC4M4EC-8/883C | AS4LC4M4ECG-6/883C | AS4LC4M4ECG-8/883C | AS4LC4M4ECJ-6/883C | AS4LC4M4ECJ-8/883C | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | EDO DRAM, 4MX4, 70ns, CMOS, CDSO24, GULLWING, CERAMIC PACKAGE-28/24 | EDO DRAM, 4MX4, 70ns, CMOS, CDSO24, CERAMIC, SOJ-28/24 | EDO DRAM, 4MX4, 60ns, CMOS, CDSO24, CERAMIC, LCC-28/24 | EDO DRAM, 4MX4, 70ns, CMOS, CDSO24, CERAMIC, LCC-28/24 | EDO DRAM, 4MX4, 80ns, CMOS, CDSO24, CERAMIC, LCC-28/24 | EDO DRAM, 4MX4, 60ns, CMOS, CDSO24, GULLWING, CERAMIC PACKAGE-28/24 | EDO DRAM, 4MX4, 80ns, CMOS, CDSO24, GULLWING, CERAMIC PACKAGE-28/24 | EDO DRAM, 4MX4, 60ns, CMOS, CDSO24, CERAMIC, SOJ-28/24 | EDO DRAM, 4MX4, 80ns, CMOS, CDSO24, CERAMIC, SOJ-28/24 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Micross | Micross | Micross | Micross | Micross | Micross | Micross | Micross | Micross |
| 零件包装代码 | SOIC | SOJ | DLCC | DLCC | DLCC | SOIC | SOIC | SOJ | SOJ |
| 包装说明 | SOP, SOP24/28,.56 | SOJ, SOJ24/28,.44 | SON, SOLCC24/28,.45 | SON, SOLCC24/28,.45 | SON, SOLCC24/28,.45 | SOP, SOP24/28,.56 | SOP, SOP24/28,.56 | SOJ, SOJ24/28,.44 | SOJ, SOJ24/28,.44 |
| 针数 | 24 | 28/24 | 28/24 | 28/24 | 28/24 | 24 | 24 | 28/24 | 28/24 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
| 最长访问时间 | 70 ns | 70 ns | 60 ns | 70 ns | 80 ns | 60 ns | 80 ns | 60 ns | 80 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-CDSO-G24 | R-CDSO-J24 | R-CDSO-N24 | R-CDSO-N24 | R-CDSO-N24 | R-CDSO-G24 | R-CDSO-G24 | R-CDSO-J24 | R-CDSO-J24 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 20.955 mm | 20.955 mm | 20.955 mm | 20.955 mm | 20.955 mm | 20.955 mm | 20.955 mm | 20.955 mm | 20.955 mm |
| 内存密度 | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit |
| 内存集成电路类型 | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
| 字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 4MX4 | 4MX4 | 4MX4 | 4MX4 | 4MX4 | 4MX4 | 4MX4 | 4MX4 | 4MX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | SOP | SOJ | SON | SON | SON | SOP | SOP | SOJ | SOJ |
| 封装等效代码 | SOP24/28,.56 | SOJ24/28,.44 | SOLCC24/28,.45 | SOLCC24/28,.45 | SOLCC24/28,.45 | SOP24/28,.56 | SOP24/28,.56 | SOJ24/28,.44 | SOJ24/28,.44 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 2048 | 2048 | 2048 | 2048 | 2048 | 2048 | 2048 | 2048 | 2048 |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
| 座面最大高度 | 4.1402 mm | 4.14 mm | 2.54 mm | 2.54 mm | 2.54 mm | 4.1402 mm | 4.1402 mm | 4.14 mm | 4.14 mm |
| 自我刷新 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 最大待机电流 | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A |
| 最大压摆率 | 0.11 mA | 0.11 mA | 0.12 mA | 0.11 mA | 0.1 mA | 0.12 mA | 0.1 mA | 0.12 mA | 0.1 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | J BEND | NO LEAD | NO LEAD | NO LEAD | GULL WING | GULL WING | J BEND | J BEND |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 11.303 mm | 11.303 mm | 11.303 mm | 11.303 mm | 11.303 mm | 11.303 mm | 11.303 mm | 11.303 mm | 11.303 mm |
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