IDT71024S15LBG8概述

Standard SRAM, 128KX8, 15ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32

IDT71024S15LBG8规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	DLCC
包装说明	SON,
针数	32
Reach Compliance Code	compliant
ECCN代码	3A001.A.2.C
最长访问时间	15 ns
JESD-30 代码	R-CDSO-N32
JESD-609代码	e3
长度	20.828 mm
内存密度	1048576 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	32
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	128KX8
输出特性	3-STATE
可输出	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	SON
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
座面最大高度	2.54 mm
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	Matte Tin (Sn)
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	30
宽度	10.16 mm

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IDT71024S15LBG8相似产品对比

	IDT71024S15LBG8	IDT71024S17LBG8	IDT71024S17LB8	IDT71024S17TY8	IDT71024S17Y8	IDT71024S20LBG8	IDT71024S20LB8	IDT71024S25LBG8	IDT71024S25LB8	IDT71024S15LB8
描述	Standard SRAM, 128KX8, 15ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32	Standard SRAM, 128KX8, 17ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32	Standard SRAM, 128KX8, 17ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32	Standard SRAM, 128KX8, 17ns, CMOS, PDSO32, 0.300 INCH, SOJ-32	Standard SRAM, 128KX8, 17ns, CMOS, PDSO32, 0.400 INCH, SOJ-32	Standard SRAM, 128KX8, 20ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32	Standard SRAM, 128KX8, 20ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32	Standard SRAM, 128KX8, 25ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32	Standard SRAM, 128KX8, 25ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32	Standard SRAM, 128KX8, 15ns, CMOS, CDSO32, 0.400 X 0.820 INCH, LCC-32
是否无铅	不含铅	不含铅	含铅	含铅	含铅	不含铅	含铅	不含铅	含铅	含铅
是否Rohs认证	符合	符合	不符合	不符合	不符合	符合	不符合	符合	不符合	不符合
零件包装代码	DLCC	DLCC	DLCC	SOJ	SOJ	DLCC	DLCC	DLCC	DLCC	DLCC
包装说明	SON,	SON,	SON,	SOJ,	SOJ,	SON,	SON,	SON,	SON,	SON,
针数	32	32	32	32	32	32	32	32	32	32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A991.B.2.B	3A991.B.2.B	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
最长访问时间	15 ns	17 ns	17 ns	17 ns	17 ns	20 ns	20 ns	25 ns	25 ns	15 ns
JESD-30 代码	R-CDSO-N32	R-CDSO-N32	R-CDSO-N32	R-PDSO-J32	R-PDSO-J32	R-CDSO-N32	R-CDSO-N32	R-CDSO-N32	R-CDSO-N32	R-CDSO-N32
JESD-609代码	e3	e3	e0	e0	e0	e3	e0	e3	e0	e0
长度	20.828 mm	20.828 mm	20.828 mm	20.955 mm	20.955 mm	20.828 mm	20.828 mm	20.828 mm	20.828 mm	20.828 mm
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32	32	32	32
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	70 °C	70 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	SON	SON	SON	SOJ	SOJ	SON	SON	SON	SON	SON
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	225	225	225	260	225	260	225	225
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	2.54 mm	2.54 mm	2.54 mm	3.76 mm	3.683 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	COMMERCIAL	COMMERCIAL	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子面层	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	NO LEAD	NO LEAD	NO LEAD	J BEND	J BEND	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	30	30	30	30	30	30	30	30	30	30
宽度	10.16 mm	10.16 mm	10.16 mm	7.62 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
厂商名称	IDT (Integrated Device Technology)	-	-	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)

IDT71024S15LBG8

IDT71024S15LBG8概述

IDT71024S15LBG8规格参数

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IDT71024S15LBG8相似产品对比

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