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IS45S32200E-75ETLA1-TR: 产品描述Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86; 产品类别存储存储; 文件大小1MB，共59页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS45S32200E-75ETLA1-TR概述

Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86

IS45S32200E-75ETLA1-TR规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
Reach Compliance Code	compliant
最长访问时间	5.5 ns
最大时钟频率 (fCLK)	133 MHz
I/O 类型	COMMON
交错的突发长度	1,2,4,8
JESD-30 代码	R-PDSO-G86
内存密度	67108864 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	32
端子数量	86
字数	2097152 words
字数代码	2000000
最高工作温度	85 °C
最低工作温度	-40 °C
组织	2MX32
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSSOP
封装等效代码	TSSOP86,.46,20
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源	3.3 V
认证状态	Not Qualified
刷新周期	4096
连续突发长度	1,2,4,8,FP
最大待机电流	0.002 A
最大压摆率	0.16 mA
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL

IS45S32200E-75ETLA1-TR相似产品对比

	IS45S32200E-75ETLA1-TR	IS45S32200E-75ETLA1	IS45S32200E-75EBLA1	IS42S32200E-7B	IS45S32200E-7BA1	IS45S32200E-7BA1-TR	IS42S32200E-5BL	IS42S32200E-5BL-TR
描述	Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86	Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86	Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90	Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, MO-207, TFBGA-90	Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, MO-207, TFBGA-90	Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90	Synchronous DRAM, 2MX32, 5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90	Synchronous DRAM, 2MX32, 5ns, CMOS, PBGA90
是否Rohs认证	符合	符合	符合	不符合	不符合	不符合	符合	符合
Reach Compliance Code	compliant	compliant	compliant	compliant	unknown	unknown	compliant	compli
最长访问时间	5.5 ns	5.5 ns	5.5 ns	5.5 ns	5.5 ns	5.5 ns	5 ns	5 ns
最大时钟频率 (fCLK)	133 MHz	133 MHz	133 MHz	142 MHz	142 MHz	143 MHz	200 MHz	200 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
交错的突发长度	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 代码	R-PDSO-G86	R-PDSO-G86	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90
内存密度	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bi
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	32	32	32	32	32	32	32	32
端子数量	86	86	90	90	90	90	90	90
字数	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
字数代码	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000
最高工作温度	85 °C	85 °C	85 °C	70 °C	85 °C	85 °C	70 °C	70 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-	-40 °C	-40 °C	-	-
组织	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSSOP	TSOP2	TFBGA	TFBGA	TFBGA	FBGA	TFBGA	FBGA
封装等效代码	TSSOP86,.46,20	TSSOP86,.46,20	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096	4096	4096	4096	4096
连续突发长度	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
最大待机电流	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
最大压摆率	0.16 mA	0.16 mA	0.16 mA	0.14 mA	0.14 mA	0.14 mA	0.2 mA	0.2 mA
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
端子形式	GULL WING	GULL WING	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.5 mm	0.5 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	DUAL	DUAL	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
是否无铅	-	不含铅	不含铅	含铅	含铅	-	不含铅	-
零件包装代码	-	TSOP2	DSBGA	DSBGA	DSBGA	-	DSBGA	-
包装说明	-	TSOP2, TSSOP86,.46,20	TFBGA, BGA90,9X15,32	TFBGA, BGA90,9X15,32	13 X 8 MM, 0.80 MM PITCH, MO-207, TFBGA-90	-	TFBGA, BGA90,9X15,32	-
针数	-	86	90	90	90	-	90	-
ECCN代码	-	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99
访问模式	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	-
其他特性	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	-
JESD-609代码	-	e3	e1	e0	e0	-	e1	-
长度	-	22.22 mm	13 mm	13 mm	13 mm	-	13 mm	-
湿度敏感等级	-	3	3	3	3	-	3	-
功能数量	-	1	1	1	1	-	1	-
端口数量	-	1	1	1	1	-	1	-
工作模式	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	-
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	260	-
座面最大高度	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	-	1.2 mm	-
自我刷新	-	YES	YES	YES	YES	-	YES	-
最大供电电压 (Vsup)	-	3.6 V	3.6 V	3.6 V	3.6 V	-	3.6 V	-
最小供电电压 (Vsup)	-	3 V	3 V	3 V	3 V	-	3 V	-
端子面层	-	Matte Tin (Sn)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Silver/Copper (Sn/Ag/Cu)	-
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	40	-
宽度	-	10.16 mm	8 mm	8 mm	8 mm	-	8 mm	-

IS45S32200E-75ETLA1-TR

IS45S32200E-75ETLA1-TR概述

IS45S32200E-75ETLA1-TR规格参数

IS45S32200E-75ETLA1-TR相似产品对比

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