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HYS72D64020GU-7: 产品描述DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184; 产品类别存储存储; 文件大小212KB，共21页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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HYS72D64020GU-7概述

DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184

HYS72D64020GU-7规格参数

参数名称	属性值
厂商名称	Infineon(英飞凌)
零件包装代码	DIMM
包装说明	,
针数	184
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	DUAL BANK PAGE BURST
最长访问时间	0.75 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N184
内存密度	4831838208 bit
内存集成电路类型	DDR DRAM MODULE
内存宽度	72
功能数量	1
端口数量	1
端子数量	184
字数	67108864 words
字数代码	64000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	64MX72
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified
自我刷新	YES
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子位置	DUAL

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HYS64/72D32000GU / HYS64/72D64020GU

Unbuffered DDR-I SDRAM-Modules

2.5 V 184-pin Unbuffered DDR-I SDRAM Modules

256MB & 512MB Modules

Preliminary Datasheet Rev. 0.99

• 184-pin Unbuffered 8-Byte Dual-In-Line

DDR-I SDRAM non-parity and ECC-Modules

for PC and Server main memory applications

• One bank 32M

64, 32M x 72 and two bank

64M x 64, 64M

72 organization

• JEDEC standard Double Data Rate

Synchronous DRAMs (DDR-I SDRAM)

Single + 2.5 V (± 0.2 V) power supply

• Built with 256Mbit DDR-I SDRAMs

organisaed as 32Mb x 8 in 66-Lead TSOPII

package

• Programmable CAS Latency, Burst Length,

and Wrap Sequence (Sequential &

Interleave)

• Performance:

-7

Component Speed Grade

Module Speed Grade

• Auto Refresh (CBR) and Self Refresh

• All inputs and outputs SSTL_2 compatible

• Serial Presence Detect with E

PROM

• Jedec standard MO-206a form factor:

133.35 mm

31.75 mm

4.00 mm

• Jedec standard reference layout

• Gold plated contacts

-7.5

PC2100

133

100

-8

PC1600

125

100

Unit

DDR266A DDR266B DDR200

PC2100

143

133

MHz

Clock Frequency (max.) @ CL = 2.5

Clock Frequency (max.) @ CL = 2

The HYS64/72Dxx0x0GU are industry standard 184-pin 8-byte Dual in-line Memory Modules

(DIMMs) organized as 32M

64 and 64M

64 for non-parity and 32M x 72 and 64M x 72 for ECC

main memory applications. The memory array is designed with Double Data Rate Synchronous

DRAMs. A variety of decoupling capacitors are mounted on the PC board. The DIMMs feature serial

presence detect based on a serial E

PROM device using the 2-pin I

C protocol. The first 128 bytes

are programmed with configuration data and the second 128 bytes are available to the customer.

INFINEON Technologies

2.01

HYS72D64020GU-7相似产品对比

	HYS72D64020GU-7	HYS64D64020GU-7.5	HYS72D32000GU-7	HYS64D32000GU-7.5	HYS72D64020GU-7.5	HYS72D64020GU-8	HYS72D32000GU-8	HYS72D32000GU-7.5
描述	DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 64MX64, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 64MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 64MX72, 0.8ns, CMOS, DIMM-184	DDR DRAM Module, 32MX72, 0.8ns, CMOS, DIMM-184	DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184
厂商名称	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
零件包装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
针数	184	184	184	184	184	184	184	184
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
最长访问时间	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.8 ns	0.8 ns	0.75 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
内存密度	4831838208 bit	4294967296 bit	2415919104 bit	2147483648 bit	4831838208 bit	4831838208 bit	2415919104 bit	2415919104 bi
内存集成电路类型	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
内存宽度	72	64	72	64	72	72	72	72
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	184	184	184	184	184	184	184	184
字数	67108864 words	67108864 words	33554432 words	33554432 words	67108864 words	67108864 words	33554432 words	33554432 words
字数代码	64000000	64000000	32000000	32000000	64000000	64000000	32000000	32000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	64MX72	64MX64	32MX72	32MX64	64MX72	64MX72	32MX72	32MX72
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

HYS72D64020GU-7

HYS72D64020GU-7概述

HYS72D64020GU-7规格参数

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