HYS 72Dxx0x0GR
Registered DDR-I SDRAM-Modules
2.5 V 184-pin Registered DDR-I SDRAM Modules
256MB, 512MB & 1 GByte Modules
Preliminary Datasheet Rev. 0.99
• 184-pin Registered 8-Byte Dual-In-Line
DDR-I SDRAM Module for PC and Server
main memory applications
• One bank 32M
×
72, 64M x 72 and two bank
64M x 72, 128M
×
72 organization
• JEDEC standard Double Data Rate
Synchronous DRAMs (DDR-I SDRAM)
Single + 2.5 V (± 0.2 V) power supply
• Built with 256Mbit DDR-I SDRAMs in 66-
Lead TSOPII package
• Programmable CAS Latency, Burst Length,
and Wrap Sequence (Sequential &
Interleave)
• Performance:
-7
Component Speed Grade
Module Speed Grade
f
CK
f
CK
• Auto Refresh (CBR) and Self Refresh
• All inputs and outputs SSTL_2 compatible
• Re-drive for all input signals using register
and PLL devices.
• Serial Presence Detect with E
2
PROM
• Jedec standard MO-161 form factor:
133.35 mm
×
43.18 mm
×
4.00 mm
(8.00 mm when stacked)
• Jedec standard reference layout:
R/C A, R/C B and R/C C
• Gold plated contacts
-7.5
PC2100
133
100
-8
PC1600
125
100
Unit
DDR266A DDR266B DDR200
PC2100
143
133
MHz
MHz
Clock Frequency (max.) @ CL = 2.5
Clock Frequency (max.) @ CL = 2
The HYS 72Dxx0x0GR are industry standard 184-pin 8-byte Dual in-line Memory Modules (DIMMs)
organized as 32M
×
72, 64M
×
72 and 128M
×
72. The memory array is designed with Double Data
Rate Synchronous DRAMs for ECC applications. All control and address signals are re-driven on
the DIMM using register devices and a PLL for the clock distribution. This reduces capacitive
loading to the system bus, but adds one cycle to the SDRAM timing. A variety of decoupling
capacitors are mounted on the PC board. The DIMMs feature serial presence detect based on a
serial E
2
PROM device using the 2-pin I
2
C protocol. The first 128 bytes are programmed with
configuration data and the second 128 bytes are available to the customer.
INFINEON Technologies
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2.01
HYS 72Dxx0x0GR
Registered DDR-I SDRAM-Modules
Ordering Information
Type
PC2100 (CL=2):
HYS 72D32000GR-7
HYS 72D64000GR-7
HYS 72D64020GR-7
HYS 72D128020GR-7
PC2100 (CL=2.5):
HYS 72D32000GR-7.5
HYS 72D64000GR-7.5
HYS 72D64020GR-7.5
PC2100R-25330-A1
PC2100R-25330-B1
PC2100R-25330-A1
one bank 256 MB Reg. DIMM
one bank 512 MB Reg. DIMM
256 MBit
256 Mbit
PC2100R-20330-A1
PC2100R-20330-B1
PC2100R-20330-A1
PC2100R-20330-C1
one bank 256 MB Reg. DIMM
one bank 512 MB Reg. DIMM
256 MBit
256 Mbit
Compliance Code
Description
SDRAM
Technology
two banks 512 MB Reg. DIMM 256 MBit
two banks 1 GByte Reg. DIMM 256 MBit
(stacked)
two banks 512 MB Reg. DIMM 256 MBit
two banks 1 GByte Reg. DIMM 256 MBit
(stacked)
HYS 72D128020GR-7.5 PC2100R-25330-C1
PC1600 (CL=2):
HYS 72D32000GR-8
HYS 72D64000GR-8
HYS 72D64020GR-8
HYS 72D128020GR-8
PC1600R-20220-A1
PC1600R-20220-B1
PC1600R-20220-A1
PC1600R-20220-C1
one bank 256 MB Reg. DIMM
one bank 512 MB Reg. DIMM
256 MBit
256 Mbit
two banks 512 MB Reg. DIMM 256 MBit
two banks 1 GByte Reg. DIMM 256 MBit
(stacked)
Note: All part numbers end with a place code (not shown), designating the silicon-die revision.
Reference information available on request.
Example: HYS 72D32000GR-8-A, indicating Rev.A die are used for SDRAM components.
INFINEON Technologies
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2.01
HYS 72Dxx0x0GR
Registered DDR-I SDRAM-Modules
Pin Definitions and Functions
A0 - A12
BA0, BA1
DQ0 - DQ63
CB0 - CB7
RAS
CAS
WE
CKE0 - CKE1
DQS0 - DQS8
CLK, CLK
DM0 - DM8
DQS9 - DQS17
S0 - S3
Address Inputs
Bank Selects
Data Input/Output
V
DD
V
SS
V
DDQ
V
DDSPD
V
REF
SCL
SDA
SA0 - SA2
WP
NC
RESET
Power (+ 2.5 V)
Ground
I/O Driver power supply
VDD Indentification flag
EEPROM power supply
I/O reference supply
Serial bus clock
Serial bus data line
slave address select
Write prodect flag
no connect
Reset pin (forces register
inputs low)
Check Bits (x72 organization only)
V
DDID
Row Address Strobe
Column Address Strobe
Read/Write Input
Clock Enable
SDRAM low data strobes
Differential Clock Input
SDRAM low data mask/
high data strobes
Chip Selects
Address Format
Density Organization Memory SDRAMs
Banks
256 MB 32M x 72
512 MB 64M
×
72
512 MB 64M x 72
1 GB
128M
×
72
1
1
2
2
32M x 8
64M
×
4
32M x 8
64M
×
4
# of
# of row/bank/ Refresh Period Interval
SDRAMs columns bits
9
18
18
36
13/2/10
13/2/11
13/2/10
13/2/11
8k
8k
8k
8k
64 ms 7.8
µs
64 ms 7.8
µs
64 ms 7.8
µs
64 ms 7.8
µs
INFINEON Technologies
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2.01
HYS 72Dxx0x0GR
Registered DDR-I SDRAM-Modules
Pin Configuration
PIN#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
Symbol
VREF
DQ0
VSS
DQ1
DQS0
DQ2
VDD
DQ3
NC
RESET
VSS
DQ8
DQ9
DQS1
VDDQ
DU (CLK1)
DU (CLK1)
VSS
DQ10
DQ11
CKE0
VDDQ
DQ16
DQ17
DQS2
VSS
A9
DQ18
A7
VDDQ
DQ19
A5
DQ24
VSS
DQ25
DQS3
A4
VDD
DQ26
DQ27
A2
VSS
A1
CB0
CB1
VDD
NC
PIN#
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
Symbol
A0
CB2
VSS
CB3
BA1
KEY
DQ32
VDDQ
DQ33
DQS4
DQ34
VSS
BA0
DQ35
DQ40
VDDQ
WE
DQ41
CAS
VSS
DQS5
DQ42
DQ43
VDD
NC, S2
DQ48
DQ49
VSS
DU (CLK2)
DU (CLK2)
VDDQ
DQS6
DQ50
DQ51
VSS
VDDID
DQ56
DQ57
VDD
DQS7
DQS8
DQ59
VSS
NC
SDA
SCL
PIN#
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
Symbol
VSS
DQ4
DQ5
VDDQ
DM0/DQS9
DQ6
DQ7
VSS
NC
NC
NC
VDDQ
DQ12
DQ13
DM1/DQS10
VDD
DQ14
DQ15
CKE1
VDDQ
BA2
DQ20
A12
VSS
DQ21
A11
DM2/DQS11
VDD
DQ22
A8
DQ23
VSS
A6
DQ28
DQ29
VDDQ
DM3/DQS12
A3
DQ30
VSS
DQ31
CB4
CB5
VDDQ
CK0
CK0
VSS
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
Symbol
DM8/DQS17
A10
CB6
VDDQ
CB7
KEY
VSS
DQ36
DQ37
VDD
DM4/DQS13
DQ38
DQ39
VSS
DQ44
RAS
DQ45
VDDQ
S0
S1
DM5/DQS14
VSS
DQ46
DQ47
NC, S3
VDDQ
DQ52
DQ53
NC(A13)
VDD
DM6/DQS15
DQ54
DQ55
VDDQ
NC
DQ60
DQ61
VSS
DM7/DQS16
DQ62
DQ63
VDDQ
SA0
SA1
SA2
VDDSPD
INFINEON Technologies
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2.01
HYS 72Dxx0x0GR
Registered DDR-I SDRAM-Modules
RS0
DQS0
DM0/DQS9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
D0
DQS
DQS4
DM4/DQS13
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
D4
DQS
DQS1
DM1/DQS10
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS DQS
D1
DQS5
DM5/DQS14
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS DQS
D5
DQS2
DM2/DQS11
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
D2
DQS
DQS6
DM6/DQS15
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
D6
DQS
DQS3
DM3/DQS12
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
D3
DQS
DQS7
DM7/DQS16
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS DQS
D7
DQS8
DM8/DQS17
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
CS0
BA0-BA1
A0-A12
RAS
CAS
CKE0
WE
PCK
PCK
R
E
G
I
S
T
E
R
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
D8
DQS
SCL
VDDSPD
Serial PD
SDA
WP A0
A1
A2
VDD, V DDQ
VREF
V SS
V DDID
EEPROM
D0 - D8
D0 - D8
D0 - D8
D0 - D8
Strap: see Note 4
SA0 SA1 SA2
RS0 -> S0 : SDRAMs D0-D8
RBA0-RBA1 -> BA0-BA1: SDRAMs D0-D8
RA0-RA12 -> A0-A12: SDRAMs D0 - D8
RRAS -> RAS : SDRAMs D0 - D8
RCAS -> CAS : SDRAMs D0 - D8
RCKE0 -> CKE: SDRAMs D0 - D8
RWE -> WE : SDRAMs D0 - D8
CK0, CK 0 --------- PLL*
RESET
* Wire per Clock Loading Table/Wiring Diagrams
Notes:
1. DQ-to-I/O wiring may be changed within a byte.
2. DQ/DQS/DM/CKE/S relationships must be
maintained as shown.
3. DQ, DQS, Adress and control resistors: 22 Ohms.
4. VDDID strap connections
STRAP OUT (OPEN): VDD = VDDQ
5. SDRAM placement alternates between the back
and front of the DIMM.
Block Diagram: One Bank 32M
×
72 DDR-I SDRAM DIMM Module
HYS72D32000GR using x8 organized SDRAMs on Raw Card Version A
INFINEON Technologies
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2.01