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HYS64V32300GU-8B: 产品描述Synchronous DRAM Module, 32MX64, 6ns, CMOS, PDMA168; 产品类别存储存储; 文件大小131KB，共19页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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HYS64V32300GU-8B概述

Synchronous DRAM Module, 32MX64, 6ns, CMOS, PDMA168

HYS64V32300GU-8B规格参数

参数名称	属性值
厂商名称	Infineon(英飞凌)
包装说明	DIMM, DIMM168
Reach Compliance Code	unknown
最长访问时间	6 ns
最大时钟频率 (fCLK)	100 MHz
I/O 类型	COMMON
JESD-30 代码	R-PDMA-N168
内存密度	2147483648 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE
内存宽度	64
端子数量	168
字数	33554432 words
字数代码	32000000
最高工作温度	70 °C
最低工作温度
组织	32MX64
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	DIMM
封装等效代码	DIMM168
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
电源	3.3 V
认证状态	Not Qualified
刷新周期	8192
最大待机电流	0.002 A
最大压摆率	0.21 mA
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	DUAL

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HYS 64/72V32300GU

SDRAM-Modules

3.3 V 32M

64/72-Bit SDRAM Modules

168-pin Unbuffered DIMM Modules

• 168 Pin unbuffered 8 Byte Dual-In-Line

SDRAM Modules for PC main memory

applications

• PC100 and PC133 versions

• One bank 32M

64 and 32M

organisation

• Optimized for byte-write non-parity or ECC

applications

• Fully PC board layout compatible to INTEL’s

Rev. 1.0 module specification

• JEDEC standard Synchronous DRAMs

(SDRAM)

• Programmed Latencies:

Product Speed

-7.5

-8

-8A

-8B

PC133

PC100

RCD

• Single + 3.3 V (± 0.3 V) power supply

• Programmable CAS Latency, Burst Length,

and Wrap Sequence (Sequential &

Interleave)

• Auto Refresh (CBR) and Self Refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs are LVTTL compatible

• Serial Presence Detect with E

PROM

• Uses Infineon 256 Mbit SDRAM components

in 32M

8 organization and TSOPII-54

packages

• Gold contact pads, card size:

133.35 mm

31.75 mm

4.00 mm

• SDRAM Performance:

-7.5

PC133

-8

PC100

100

-8A

PC100

100

-8B

PC100

100

Unit

MHz

Clock Frequency (max.)

Clock Access Time

133

5.4

The HYS 64V32300 and HYS 72V32300 are industry standard 168-pin 8-byte Dual in-line Memory

Modules (DIMMs) which are organized as 32M

64 and 32M

72 in 1 memory bank high speed

memory arrays designed with 256M Synchronous DRAMs (SDRAMs) for non-parity and ECC

applications. The DIMMs use -7.5 speed sorted 32M

8 SDRAM devices in TSOP54 packages to

meet the PC133 requirement and -8,-8A & -8B components for the standard PC100 applications.

Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s

PC100 module specification. The DIMMs have a serial presence detect, implemented with a serial

PROM using the 2-pin I

C protocol. The first 128 bytes are utilized by the DIMM manufacturer

and the second 128 bytes are available to the end user. All Infineon 168-pin DIMMs provide a high

performance, flexible 8-byte interface in a 133.35 mm long footprint, with 1.25“ (31.75 mm) height.

Data Book

12.99

HYS64V32300GU-8B相似产品对比

	HYS64V32300GU-8B	HYS72V32300GU-7.5	NS-1/20.215OHM1%S70	HYS72V32300GU-8B	HYS64V32300GU-7.5	HYS64V32300GU-8
描述	Synchronous DRAM Module, 32MX64, 6ns, CMOS, PDMA168	Synchronous DRAM Module, 32MX72, 5.4ns, CMOS, PDMA168	Fixed Resistor, Wire Wound, 0.75W, 0.215ohm, 1% +/-Tol, -90,90ppm/Cel,	Synchronous DRAM Module, 32MX72, 6ns, CMOS, PDMA168	Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, PDMA168	Synchronous DRAM Module, 32MX64, 6ns, CMOS, PDMA168
Reach Compliance Code	unknown	unknown	compliant	unknown	unknown	unknown
端子数量	168	168	2	168	168	168
最高工作温度	70 °C	70 °C	250 °C	70 °C	70 °C	70 °C
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	Axial	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
技术	CMOS	CMOS	WIRE WOUND	CMOS	CMOS	CMOS
厂商名称	Infineon(英飞凌)	Infineon(英飞凌)	-	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
包装说明	DIMM, DIMM168	DIMM, DIMM168	-	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
最长访问时间	6 ns	5.4 ns	-	6 ns	5.4 ns	6 ns
最大时钟频率 (fCLK)	100 MHz	133 MHz	-	100 MHz	133 MHz	100 MHz
I/O 类型	COMMON	COMMON	-	COMMON	COMMON	COMMON
JESD-30 代码	R-PDMA-N168	R-PDMA-N168	-	R-PDMA-N168	R-PDMA-N168	R-PDMA-N168
内存密度	2147483648 bit	2415919104 bit	-	2415919104 bit	2147483648 bit	2147483648 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	-	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
内存宽度	64	72	-	72	64	64
字数	33554432 words	33554432 words	-	33554432 words	33554432 words	33554432 words
字数代码	32000000	32000000	-	32000000	32000000	32000000
组织	32MX64	32MX72	-	32MX72	32MX64	32MX64
输出特性	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIMM	DIMM	-	DIMM	DIMM	DIMM
封装等效代码	DIMM168	DIMM168	-	DIMM168	DIMM168	DIMM168
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
电源	3.3 V	3.3 V	-	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	-	8192	8192	8192
最大待机电流	0.002 A	0.002 A	-	0.002 A	0.002 A	0.002 A
最大压摆率	0.21 mA	0.27 mA	-	0.21 mA	0.27 mA	0.21 mA
标称供电电压 (Vsup)	3.3 V	3.3 V	-	3.3 V	3.3 V	3.3 V
表面贴装	NO	NO	-	NO	NO	NO
温度等级	COMMERCIAL	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD
端子节距	1.27 mm	1.27 mm	-	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	-	DUAL	DUAL	DUAL

HYS64V32300GU-8B

HYS64V32300GU-8B概述

HYS64V32300GU-8B规格参数

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