Datasheet> 器件分类 > 存储> 存储> HYB39S64400CTL-7.5

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HYB39S64400CTL-7.5: 产品描述Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54; 产品类别存储存储; 文件大小346KB，共52页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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HYB39S64400CTL-7.5概述

Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54

HYB39S64400CTL-7.5规格参数

参数名称	属性值
厂商名称	Infineon(英飞凌)
零件包装代码	TSOP2
包装说明	TSOP2,
针数	54
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	5.4 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G54
长度	22.22 mm
内存密度	67108864 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	4
功能数量	1
端口数量	1
端子数量	54
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	16MX4
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
认证状态	Not Qualified
座面最大高度	1.2 mm
自我刷新	YES
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
宽度	10.16 mm

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HYB 39S64400/800CT(L)

64-MBit Synchronous DRAM

• High Performance:

• Full page (optional) for sequential wrap

around

Units

MHz

• Multiple Burst Read with Single Write

Operation

• Automatic and Controlled Precharge

Command

• Data Mask for Read/Write Control (x4, x8)

• Auto Refresh (CBR) and Self Refresh

• Suspend Mode and Power Down Mode

• 4096 Refresh Cycles / 64 ms

• Fully Synchronous to Positive Clock Edge

• 0 to 70

°C

operating temperature

• Four Banks controlled by BA0 & BA1

• Programmable CAS Latency: 2, 3

• Programmable Wrap Sequence: Sequential

or Interleave

• Programmable Burst Length: 1, 2, 4, 8

• Random Column Address every CLK

(1-N Rule)

• Single 3.3 V

0.3 V Power Supply

• LVTTL Interface

• Plastic Packages:

P-TSOPII-54 400mil width (x4, x8)

• -7.5 version for PC133 3-3-3 application

-8 version for PC100 2-2-2 applications

-7.5

-8

125

CKMAX

CK3

AC3

CK2

AC2

133

7.5

5.4

The HYB 39S64400/800CT are four bank Synchronous DRAM’s organized as 4 banks

4 MBit

and 4 banks

2 MBit

8 respectively. These synchronous devices achieve high speed data

transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes

the output data to a system clock. The chip is fabricated using the Infineon advanced 0.19

µm

64 MBit DRAM process technology.

The device is designed to comply with all JEDEC standards set for synchronous DRAM products,

both electrically and mechanically. All of the control, address, data input and output circuits are

synchronized with the positive edge of an externally supplied clock.

Operating the four memory banks in an interleave fashion allows random access operation to occur

at higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible

depending on burst length, CAS latency and speed grade of the device.

Auto Refresh (CBR) and Self Refresh operation are supported. These devices operates with a

single 3.3 V

0.3 V power supply and are available in TSOPII packages.

Data Book

12.99

HYB39S64400CTL-7.5相似产品对比

	HYB39S64400CTL-7.5	HYB39S64400CTL-8	HYB39S64800CTL-7.5
描述	Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54	Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54	Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
零件包装代码	TSOP2	TSOP2	TSOP2
包装说明	TSOP2,	TSOP2,	TSOP2,
针数	54	54	54
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	5.4 ns	6 ns	5.4 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
长度	22.22 mm	22.22 mm	22.22 mm
内存密度	67108864 bit	67108864 bit	67108864 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	4	4	8
功能数量	1	1	1
端口数量	1	1	1
端子数量	54	54	54
字数	16777216 words	16777216 words	8388608 words
字数代码	16000000	16000000	8000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C
组织	16MX4	16MX4	8MX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
认证状态	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm
自我刷新	YES	YES	YES
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES
技术	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	GULL WING	GULL WING	GULL WING
端子节距	0.8 mm	0.8 mm	0.8 mm
端子位置	DUAL	DUAL	DUAL
宽度	10.16 mm	10.16 mm	10.16 mm
厂商名称	Infineon(英飞凌)	-	Infineon(英飞凌)

HYB39S64400CTL-7.5

HYB39S64400CTL-7.5概述

HYB39S64400CTL-7.5规格参数

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