Ordering number : ENA1169
SFT1202
SANYO Semiconductors
DATA SHEET
SFT1202
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
•
•
•
•
•
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
180
180
150
7
2
3
400
1
15
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Marking : T1202
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73008EA TI IM TC-00001478 No. A1169-1/4
SFT1202
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=80V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=1A, IB=100mA
IC=0.5A, IB=50mA
IC=1A, IB=100mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
200
140
12
110
65
0.85
180
180
150
7
50
1460
70
165
100
1.2
Ratings
min
typ
max
1
1
560
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Unit
μA
μA
Package Dimensions
unit : mm (typ)
7518-003
6.5
5.0
2.3
1.5
Package Dimensions
unit : mm (typ)
7003-003
6.5
5.0
2.3
4
4
1.5
0.5
0.5
5.5
7.0
5.5
7.0
0.8
1.6
1.2
7.5
1
0.6
2
0.8
0.85
0.7
0.85
0.5
3
0 to 0.2
1.2
2.5
1.2
0.6
0.5
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
IB1
OUTPUT
IB2
VR
RB
PW=20μs
D.C.≤1%
INPUT
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=75V
IC=10IB1= --10IB2=0.5A
No. A1169-2/4
SFT1202
A
2.0
IC -- VCE
250
mA
200
16
0m
A
120m
100mA
80mA
2.0
IC -- VCE
100mA
80mA
mA
60mA
Collector Current, IC -- A
1.5
Collector Current, IC -- A
60mA
1.5
40mA
12
0mA
20mA
mA
40mA
500
1.0
20mA
1.0
200
mA
10mA
10mA
0.5
5mA
0.5
5mA
2mA
1mA
0
0
0.1
0.2
0.3
IB=0mA
0.4
0.5
IT13542
0
0
1
2
3
4
IB=0mA
5
IT13543
Collector-to-Emitter Voltage, VCE -- V
2.5
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
1000
hFE -- IC
VCE=5V
2.0
7
5
VCE=5V
Ta=75
°
C
25
°
C
Collector Current, IC -- A
DC Current Gain, hFE
3
2
--25
°
C
1.5
100
7
5
3
2
10
0.01
1.0
Ta=7
5
°
C
25
°
C
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT13544
--25
°
C
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Base-to-Emitter Voltage, VBE -- V
3
Collector Current, IC -- A
7
IT13545
fT -- IC
Cob -- VCB
f=1MHz
VCE=10V
Gain-Bandwidth Product, fT -- MHz
2
5
Output Capacitance, Cob -- pF
2
3
5
7
2
3
5
7
3
2
100
7
5
10
7
5
3
2
10
0.01
0.1
Collector Current, IC -- A
7
3
2
1.0
IT13546
3
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
2
5 7 100
IT13547
VBE(sat) -- IC
IC / IB=10
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
1.0
0.1
7
5
3
2
Ta= --25
°
C
7
2
5
°
C
Ta=7
--25
°
C
5
°
C
5
25
°
C
75
°
C
3
0.01
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
2
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
IT13548
Collector Current, IC -- A
IT13549
No. A1169-3/4
SFT1202
5
3
2.5
2
ASO
ICP=3A
<10μs
5
3
2.5
2
ASO
ICP=3A
<10μs
1m
μ
s
μ
s
500
100
μ
s
μ
s
500
100
s
0m
n
s
1
tio
era
s
1m
s
m
10
Collector Current, IC -- A
1.0
7
5
3
2
0.1
7
5
3
2
Collector Current, IC -- A
IC=2A
IC=2A
DC
10
era
n
tio
DC
op
0m
s
1.0
7
5
3
2
0.1
7
5
3
op
0
10
ms
0.01
0.01 2 3 5 7 0.1
Ta=25
°C
Single pulse
2
2 3 5 7 1.0
2 3 5 7 10
Collector-to-Emitter Voltage,
1.2
PC -- Ta
2 3 5 7100 2 3
VCE -- V
IT13555
0.01
0.01 2 3 5 7 0.1
Tc=25
°C
Single pulse
2 3 5 7 1.0
2 3 5 7 10
Collector-to-Emitter Voltage, VCE -- V
16
15
14
2 3 5 7100 2 3
IT13556
PC -- Tc
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
0
20
40
60
80
100
120
140
160
IT13553
1.0
12
10
8
6
4
2
0.8
0.6
0.4
0.2
0
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
Case Temperature, Tc --
°C
IT13554
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1169-4/4
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