Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MICRO, BGA-48
| 参数名称 | 属性值 |
| 厂商名称 | SK Hynix(海力士) |
| 零件包装代码 | BGA |
| 包装说明 | VFBGA, |
| 针数 | 48 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 55 ns |
| JESD-30 代码 | R-PBGA-B48 |
| JESD-609代码 | e1 |
| 长度 | 8.5 mm |
| 内存密度 | 8388608 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端子数量 | 48 |
| 字数 | 524288 words |
| 字数代码 | 512000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 512KX16 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | VFBGA |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 0.95 mm |
| 最大供电电压 (Vsup) | 2.3 V |
| 最小供电电压 (Vsup) | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | TIN SILVER COPPER |
| 端子形式 | BALL |
| 端子节距 | 0.75 mm |
| 端子位置 | BOTTOM |
| 宽度 | 7.4 mm |
| HY62SF16804A-SM55C | HY62SF16804A-DM55I | HY62SF16804A-SM55I | HY62SF16804A-DM55C | |
|---|---|---|---|---|
| 描述 | Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MICRO, BGA-48 | Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MICRO, BGA-48 | Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MICRO, BGA-48 | Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, MICRO, BGA-48 |
| 厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 零件包装代码 | BGA | BGA | BGA | BGA |
| 包装说明 | VFBGA, | MICRO, BGA-48 | VFBGA, | VFBGA, |
| 针数 | 48 | 48 | 48 | 48 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 55 ns | 55 ns | 55 ns | 55 ns |
| JESD-30 代码 | R-PBGA-B48 | R-PBGA-B48 | R-PBGA-B48 | R-PBGA-B48 |
| JESD-609代码 | e1 | e1 | e1 | e1 |
| 长度 | 8.5 mm | 8.5 mm | 8.5 mm | 8.5 mm |
| 内存密度 | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 48 | 48 | 48 | 48 |
| 字数 | 524288 words | 524288 words | 524288 words | 524288 words |
| 字数代码 | 512000 | 512000 | 512000 | 512000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 85 °C | 85 °C | 70 °C |
| 组织 | 512KX16 | 512KX16 | 512KX16 | 512KX16 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | VFBGA | VFBGA | VFBGA | VFBGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 0.95 mm | 0.95 mm | 0.95 mm | 0.95 mm |
| 最大供电电压 (Vsup) | 2.3 V | 2.3 V | 2.3 V | 2.3 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL |
| 端子面层 | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER |
| 端子形式 | BALL | BALL | BALL | BALL |
| 端子节距 | 0.75 mm | 0.75 mm | 0.75 mm | 0.75 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 宽度 | 7.4 mm | 7.4 mm | 7.4 mm | 7.4 mm |
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