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AR25DB0

产品描述Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon,
产品类别分立半导体    二极管   
文件大小359KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 选型对比 全文预览

AR25DB0概述

Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon,

AR25DB0规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
包装说明O-PEDB-N2
Reach Compliance Codecompliant
ECCN代码EAR99
应用GENERAL PURPOSE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
JESD-30 代码O-PEDB-N2
最大非重复峰值正向电流400 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-50 °C
最大输出电流25 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式DISK BUTTON
最大重复峰值反向电压200 V
最大反向电流5 µA
最大反向恢复时间3 µs
表面贴装YES
端子形式NO LEAD
端子位置END

文档预览

下载PDF文档
AR25A thru AR25M
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Diffused junction
- Low leakage
- High surge capability
- Low cost construction utilizing void-free molded plastic technique
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
High Current Button Rectifiers
MECHANICAL DATA
Case:
AR
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
1.8 g (approximately)
AR
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 25 A
Maximum reverse current @ Rated VR T
J
=25
o
C
T
J
=125
o
C
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical Thermal Resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Time Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
trr
Cj
R
θJC
T
J
T
STG
AR
25A
50
35
50
AR
25B
100
70
100
AR
25D
200
140
200
AR
25G
400
280
400
25
400
1.0
5
250
3
300
1
- 50 to +175
- 50 to +175
O
AR
25J
600
420
600
AR
25K
800
560
800
AR
25M
1000
700
1000
UNIT
V
V
V
A
A
V
μA
μs
pF
C/W
O
O
C
C
Document Number: DS_D1409003
Version: D14

AR25DB0相似产品对比

AR25DB0 AR25DB0G AR25GB0 AR25KB0G AR25JB0G
描述 Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 25A, 400V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 25A, 800V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon,
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
包装说明 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V 1 V 1 V 1 V
JESD-30 代码 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2 O-PEDB-N2
最大非重复峰值正向电流 400 A 400 A 400 A 400 A 400 A
元件数量 1 1 1 1 1
相数 1 1 1 1 1
端子数量 2 2 2 2 2
最高工作温度 175 °C 175 °C 175 °C 175 °C 175 °C
最低工作温度 -50 °C -50 °C -50 °C -50 °C -50 °C
最大输出电流 25 A 25 A 25 A 25 A 25 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
最大重复峰值反向电压 200 V 200 V 400 V 800 V 600 V
最大反向电流 5 µA 5 µA 5 µA 5 µA 5 µA
最大反向恢复时间 3 µs 3 µs 3 µs 3 µs 3 µs
表面贴装 YES YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 END END END END END

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