Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) |
| 零件包装代码 | TSOP2 |
| 包装说明 | TSOP2, TSOP50,.46,32 |
| 针数 | 50 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 访问模式 | DUAL BANK PAGE BURST |
| 最长访问时间 | 7 ns |
| 其他特性 | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 100 MHz |
| I/O 类型 | COMMON |
| 交错的突发长度 | 1,2,4,8 |
| JESD-30 代码 | R-PDSO-G50 |
| JESD-609代码 | e0 |
| 长度 | 20.95 mm |
| 内存密度 | 16777216 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM |
| 内存宽度 | 16 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 50 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 1MX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TSOP2 |
| 封装等效代码 | TSOP50,.46,32 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 座面最大高度 | 1.2 mm |
| 自我刷新 | YES |
| 连续突发长度 | 1,2,4,8,FP |
| 最大待机电流 | 0.002 A |
| 最大压摆率 | 0.14 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 0.8 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 10.16 mm |
| IS42S16100A1-10T | IS42S16100A1-7TL | IS42S16100A1-10TLI | IS42S16100A1-7TLI | IS42S16100A1-10TL | IS42S16100A1-10TI | IS42S16100A1-7TI | IS42S16100A1-6T | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 | Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 | Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 | Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 |
| 是否无铅 | 含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 符合 | 符合 | 符合 | 符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| 零件包装代码 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
| 包装说明 | TSOP2, TSOP50,.46,32 | TSOP2, TSOP50,.46,32 | TSOP2, TSOP50,.46,32 | TSOP2, TSOP50,.46,32 | TSOP2, TSOP50,.46,32 | TSOP2, TSOP50,.46,32 | TSOP2, TSOP50,.46,32 | TSOP2, TSOP50,.46,32 |
| 针数 | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
| 最长访问时间 | 7 ns | 5.5 ns | 7 ns | 5.5 ns | 7 ns | 7 ns | 5.5 ns | 5.5 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 100 MHz | 143 MHz | 100 MHz | 143 MHz | 100 MHz | 100 MHz | 143 MHz | 166 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| 交错的突发长度 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
| JESD-30 代码 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 |
| JESD-609代码 | e0 | e3 | e3 | e3 | e3 | e0 | e0 | e0 |
| 长度 | 20.95 mm | 20.95 mm | 20.95 mm | 20.95 mm | 20.95 mm | 20.95 mm | 20.95 mm | 20.95 mm |
| 内存密度 | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
| 字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 85 °C | 85 °C | 70 °C | 85 °C | 85 °C | 70 °C |
| 组织 | 1MX16 | 1MX16 | 1MX16 | 1MX16 | 1MX16 | 1MX16 | 1MX16 | 1MX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
| 封装等效代码 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | 260 | 260 | 260 | 260 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES |
| 连续突发长度 | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
| 最大待机电流 | 0.002 A | 0.002 A | 0.003 A | 0.003 A | 0.002 A | 0.003 A | 0.003 A | 0.002 A |
| 最大压摆率 | 0.14 mA | 0.14 mA | 0.16 mA | 0.16 mA | 0.14 mA | 0.16 mA | 0.16 mA | 0.16 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 40 | 40 | 40 | 40 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
