SBP13009-S
High Voltage Fast-Switching NPN Power Transistor
Features
½
½
½
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
Switching characteristics required such as lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
Total Dissipation at Ta*=25℃
T
J
T
STG
Operation Junction Temperature
Storage Temperature
2.2
-40~150
-40~150
℃
℃
Parameter
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc*=25℃
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
700
400
9.0
12
25
6.0
Units
V
V
V
A
A
A
A
W
t
P
=5ms
12
100
Tc :Case temperature (good cooling)
Ta :Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
R
ӨJC
R
ӨJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.25
40
Units
℃/W
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
SBP13009-S
Electrical Characteristics
(Tc=25℃
Symbol
V
CEO(sus)
unless otherwise noted)
Parameter
Collector-Emitter Breakdown Voltage
Test Conditions
Ic=10mA,Ib=0
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Value
Min
400
Typ
-
Max
-
0.5
Units
V
-
-
1.0
1.5
V
V
CE(sat)
Collector -Emitter Saturation Voltage
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
Tc=100℃
Ic=5.0A,Ib=1.0A
-
-
2.0
V
V
BE(sat)
Base -Emitter Saturation Voltage
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100℃
-
-
1.2
1.6
1.5
1.0
5.0
40
40
V
-
-
V
I
CBO
Collector -Base Cutoff Current
(Vbe=-1.5V)
DC Current Gain
Resistive Load
Vcb=700V
Vcb=700V,Tc=100℃
Vce=5V,Ic=5.0A
Vce=5V,Ic=8.0A
V
CC
=125V,Ic=6.0A
I
B1
=1.6A,I
B2
=-1.6A
T
P
=25
µs
V
CC
=15V,Ic=5A
I
B1
=1.6A,Vbe(off)=5V
L=0.35mH,Vclamp=300
V
V
CC
=15V,Ic=1A
I
B1
=0.4A,Vbe(off)=5V
L=0.2mH,Vclamp=300V
Tc=100℃
-
10
6
-
-
-
-
mA
h
FE
ts
tf
Storage time
Fall Time
Inductive Load
1.5
0.17
3.0
0.4
µs
ts
tf
Storage Time
Fall Time
-
-
0.8
0.04
2.0
0.1
µs
Inductive Load
ts
tf
Storage Time
Fall Time
-
-
0.8
0.05
2.5
0.15
µs
Note:
Pulse Test : Pulse Width300,Duty cycle 2%
2/5
Steady, all for your advance
SBP13009-S
Fig.1 DC Current Gain
Fig.2 Collector -Emitter Saturation Voltage
Fig.3 Bade-Emitter Saturation Voltage
Fig.4 Safe Operation Area
Fig.5 Power Derating
Fig.6 Reverse Biased Safe Operation Area
3/5
Steady, all for your advance
SBP13009-S
Resistive Load Switching Test Circuit
Inductive Load Switching & RBSOA Test Circuit
4/5
Steady, all for your advance
SBP13009-S
To-220 Package Dimension
Unit:mm
5/5
Steady, all for your advance