SBP13005-O
High Voltage Fast-Switching NPN Power Transistor
Features
◆
Very High Switching Speed
◆
High Voltage Capability
◆
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc* = 25℃
Total Dissipation at Ta* = 25℃
Operation Junction Temperature
Storage Temperature
t
P
= 5ms
Test Conditions
V
BE
= 0
I
B
= 0
I
C
= 0
Value
700
400
9.0
4.0
8.0
2.0
4.0
75
2.0
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.67
62.5
Units
℃
/W
℃
/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
1/5
SBP13005-O
Electrical Characteristics
(T
C
=25
℃
unless otherwise noted)
Symbol
Value
Parameter
Collector-Emitter Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
Min
400
Typ
-
Max
-
0.3
-
-
0.5
1.0
-
-
1.2
1.6
1.0
5.0
40
40
Units
V
CEO(sus)
Ic=10mA,Ib=0
Ic=1.0A,Ib=0.2A
Ic=2.0A,Ib=0. 5A
Ic=4A,Ib=1.0A
V
V
CE(sat)
V
V
BE(sat)
Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
(Vbe=-1.5V)
DC Current Gain
Resistive Load
Ic=1.0A,Ib=0.2A
Ic=2.0A,Ib=0. 5A
V
I
CBO
Vcb=700V
Vcb=700V, Tc=100℃
Vce=2V,Ic=1.0A
Vce=2V, Ic=2.0A
-
10
8
-
-
-
-
mA
h
FE
ts
tf
ts
tf
ts
tf
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
V
CC
=125V ,
I
B1
=0.4A ,
Tp=25㎲
Ic=2.0A
I
B2
=-1.0A
2.5
0.15
-
-
-
-
1.2
0.12
1.2
0.08
4.0
0.4
4.0
0.3
3.0
0.4
㎲
V
CC
=15V ,Ic=1A
I
B1
=0.4A , I
B2
=-0.1A
L=0.35mH,Vclamp=300V
㎲
V
CC
=15V ,Ic=1A
I
B1
=0.4A , I
B2
=-1.0A
L=0.35mH,Vclamp=300V
Tc=100℃
㎲
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
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.
SBP13005-O
Fig. 1 DC Current Gain
Fig. 2 Collector-Emitter Saturation Voltage
Fig. 3 Base--Emitter Saturation Voltage
Fig. 4 Safe Operation Area
Fig.5 Power Derating
Fig.6 Reverse Biased Safe Operation Area
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