Mixed Technology PUMA2
PUMA 2FS10006
Issue 5.3 April 2000
Description
The PUMA 2FS10006 is a Mixed Technology PUMA
2 Module comprising of two 512K x 8 FLASH
components and two 128K x 8 SRAM components.
The device is user configurable as 8 and 16 bit wide.
The FLASH is available with 90 & 120ns access
times. The SRAM has speeds ranging from 25 to 45
ns and has completely static operation.
Both devices have inputs and outputs which are TTL
compatible.
The device can be screened in accordance with MIL-
STD-883.
Block Diagram
A0~A16
A17~A18
/OE
/WE4
/WE3
/WE2
/WE1
512K x 8
FLASH
512K x 8
FLASH
128K x 8
SRAM
128K x 8
SRAM
/CS1
/CS2
/CS3
/CS4
D0~7
D8~15
D16~23
D24~31
Features
• 8 Mbit FLASH and 2Mbit SRAM.
• Output user configurable as 8 or 16 bits wide.
• Onboard Decoupling Capacitors.
• Operating Power (Worst Case) : 1.87W
•
FLASH
Access times of 90 or 120ns
5V Programme/Erase.
Uniform Sector Architecture.
•
SRAM
Access time of 25 to 45ns.
• TTL compatible Inputs and Outputs.
Pin Definition
See page 2.
Pin Functions
Description
Address Input
Data Input/Output
Chip Select (FLASH)
Chip Select (SRAM)
Write Enable (FLASH)
Write Enable (SRAM)
Output Enable
No Connect
Power
Ground
Signal
A0~A18
D0~D31
/CS1~2
/CS3~4
/WE1~2
/WE3~4
/OE
NC
V
CC
GND
Package Details
PUMA 2 - Ceramic 66 Pin Grid Array
Max. Dimensions (mm) - 27.69 x 27.69 x 6.86
Pin Definition - PUMA2FS10006
1 12 23
34 45 56
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
Signal
D8
D9
D10
A13
A14
A15
A16
A18
D0
D1
D2
/WE2
/CS2
GND
D11
A10
A11
A12
V
CC
/CS1
NC
D3
D15
D14
D13
D12
/OE
A17
/WE1
D7
D6
D5
D4
Pin
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
Signal
D24
D25
D26
A6
A7
NC
A8
A9
D16
D17
D18
V
CC
/CS4
/WE4
D27
A3
A4
A5
/WE3
/CS3
GND
D19
D31
D30
D29
D28
A0
A1
A2
D23
D22
D21
D20
11 22 33
44 55 66
Top View
PAGE 2
Issue 5.3 April 2000
Module Absolute Maximum Ratings
(1)
Parameter
Voltage on any pin Relative to GND
Power Dissipation (FLASH)
Power Dissipation (SRAM)
Storage Temperature
(2)
(3)
Module DC Operating Conditions
Symbol
V
IN
/V
OUT
P
DF
P
DS
T
STG
Min
-0.5
-
-
-65
to
to
Max
+6.0
4.3
2.0
+150
Unit
V
W
W
O
(2)
C
Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operation sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability
(2) This is specified in 16 Bit Mode with both FLASH devices active and both SRAM’s in standby mode or vice versa.
(3) Except A9 during Sector Protect where V
ID
is applied to A9.
Module Recommended Operating Conditions
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
(Commercial)
(Industrial)
(Military)
Symbol
V
CC
V
IH
V
IL
T
A
T
AI
T
AM
Min
4.5
2.2
-0.5
0
-40
-55
Typ
5.0
-
-
-
-
-
Max
5.5
V
CC
+0.5
0.8
70
85
125
Unit
V
V
V
O
O
O
C
C
C
(Suffix I)
(Suffix M,MB)
Module Capacitance
(V
CC
= 5.0V+10%, T
A
= 25
O
C)
Parameter
Input Capacitance
Input/Output Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
=0V
V
I/O
=0V
Min
-
-
Typ Max
-
-
29
40
Unit
pF
pF
Note : These Parameters are calculated not measured. These parameters are specified for the module operating in 8 bit mode
where the 32 data pins are combined in the users application to provide a 8 bit data width.
PAGE 3
Issue 5.3 April 2000
Module DC Electrical Characteristics
(V
CC
=5V+10%, T
A
=-55
O
C to +125
O
C)
Parameter
Input Leakage Current
Output Leakage Current
(8 bit)
Symbol Test Condition
I
LI
I
LO
V
IN
= GND to V
CC
/CS=V
IH
or /OE=V
IH
or
/WE=V
IL
, V
OUT
= GND to V
CC
Min. Cycle, 100% Duty
/CS=V
IL
, V
IN
=V
IH
or V
IL
,
I
OUT
=0mA
As above
/CS = V
IL
,/OE = V
IH
,
f = 6MHz
As above
Program/Erase,
Controller active
As above
/CS=V
IH
f=0MHz, /CS
≥
V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
Min
-6
-6
Max
6
6
Unit
µ
A
µ
A
SRAM
Operating Current
(16 Bit)
(8 Bit)
I
CC
I
CC1
I
CC1
I
CC2
I
CC3
I
CC3
I
SB
-
-
-
-
-
340
210
80
140
240
160
mA
mA
mA
mA
mA
mA
mA
mA
FLASH
Operating Current
16 Bit - Read
8 Bit - Read
16 Bit - Program and Erase
8 Bit - Program and Erase
Standby Current (Module)
(TTL)
-
-
80
40
(CMOS) I
SB1
Notes: Typical Values are at V
CC
=5.0V, T
A
=25
O
C and specified loading.
Throughout SRAM section /CS refers to /CS3~4 and /WE refers to /WE3~4 unless specifically stated otherwise.
Throughout FLASH section, /WE refers to /WE 1~2 and /CS refers to /CS 1~2 unless specifically stated otherwise.
FLASH operating currents specified include SRAM standby currents.
SRAM operating currents specified include FLASH standby currents.
PAGE 4
Issue 5.3 April 2000
SRAM Section
DC Operating Conditions
Test Conditions
•
•
•
•
•
Input pulse levels : 0V to 3.0V
Input rise and fall times : 3ns
Input and Output timing reference levels : 1.5V
Output Load : See Load Diagram.
V
CC
= 5V+10%
Output Load
I/O Pin
645Ω
1.76V
100pF
Operating Modes
The table below shows the logic inputs required to control the operating modes of each of the SRAM’s on
the module
Mode
Not Selected
Output Disable
Read
Write
/CS
1
0
0
0
/OE
X
1
0
X
/WE
X
1
1
0
V
CC
Current
I
SB
,I
SB1
I
CC
, I
CC1
I
CC
, I
CC1
I
CC
I/O Pin
High Z
High Z
D
OUT
D
IN
Reference Cycle
Power Down
-
Read Cycle
Write Cycle
Legend : 1 = V
IH
0 = V
IL
X = Don’t Care
PAGE 5
Issue 5.3 April 2000
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