IDT74FCT162827AT/CT
FAST CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
FAST CMOS
20-BIT BUFFER
IDT74FCT162827AT/CT
FEATURES:
•
•
•
•
•
•
•
•
•
•
0.5 MICRON CMOS Technology
High-speed, low-power CMOS replacement for ABT functions
Typical t
SK(o)
(Output Skew) < 250ps
Low input and output leakage
≤
1µA (max.)
ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
V
CC
= 5V ±10%
Balanced Output Drivers (±24mA)
Reduced system switching noise
Typical V
OLP
(Output Ground Bounce) < 0.6V at V
CC
= 5V,
T
A
= 25°C
Available in SSOP and TSSOP packages
DESCRIPTION:
The FCT162827T 20-bit buffers are built using advanced dual metal CMOS
technology. These 20-bit bus drivers provide high-performance bus interface
buffering for wide data/address paths or buses carrying parity. Two pair of
NAND-ed output enable controls offer maximum control flexibility and are
organized to operate the device as two 10-bit buffers or one 20-bit buffer. Flow-
through organization of signal pins simplifies layout. All inputs are designed with
hysteresis for improved noise margin.
The FCT162827T has balanced output drive with current limiting resistors.
This offers low ground bounce, minimal undershoot, and controlled output fall
times–reducing the need for external series terminating resistors. The
FCT162827T is a plug-in replacement for the FCT16827T and ABT16827 for
on-board interface applications.
FUNCTIONAL BLOCK DIAGRAM
1
1
OE
1
1
OE
2
56
2
OE
1
2
OE
2
28
29
1
A
1
55
2
1
Y
1
2
A
1
42
15
2
Y
1
TO NINE OTHER CHAN-
NELS
TO NINE OTHER CHAN-
NELS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1
© 2002 Integrated Device Technology, Inc.
MAY 2002
DSC-5440/3
IDT74FCT162827AT/CT
FAST CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
1
OE
1
1
Y
1
1
Y
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Description
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max
–0.5 to 7
–0.5 to V
CC
+0.5
–65 to +150
–60 to +120
Unit
V
V
°C
mA
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
1
OE
2
1
A
1
1
A
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
TERM(2)
V
TERM(3)
T
STG
I
OUT
GND
1
Y
3
1
Y
4
GND
1
A
3
1
A
4
V
CC
1
Y
5
1
Y
6
1
Y
7
V
CC
1
A
5
1
A
6
1
A
7
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. All device terminals except FCT162XXX Output and I/O terminals.
3. Outputs and I/O terminals for FCT162XXX.
GND
1
Y
8
1
Y
9
1
Y
10
2
Y
1
2
Y
2
2
Y
3
GND
1
A
8
1
A
9
1
A
10
2
A
1
2
A
2
2
A
3
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
3.5
3.5
Max.
6
8
Unit
pF
pF
NOTE:
1. This parameter is measured at characterization but not tested.
GND
2
Y
4
2
Y
5
2
Y
6
GND
2
A
4
2
A
5
2
A
6
PIN DESCRIPTION
Pin Names
xOEx
xAx
xYx
Data Inputs
3-State Outputs
Description
Output Enable Inputs (Active LOW)
V
CC
2
Y
7
2
Y
8
V
CC
2
A
7
2
A
8
GND
2
Y
9
2
Y
10
2
OE
1
GND
2
A
9
2
A
10
2
OE
2
FUNCTION TABLE
(1)
Inputs
xOE
1
L
L
H
X
NOTE:
1. H = HIGH voltage level
L = LOW voltage level
X = Don’t care
Z = High-impedance
SSOP/ TSSOP
TOP VIEW
Outputs
xAx
L
H
X
X
xYx
L
H
Z
Z
xOE
2
L
L
X
H
2
IDT74FCT162827AT/CT
FAST CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 5.0V ±10%
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
V
IK
I
OS
V
H
I
CCL
I
CCH
I
CCZ
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current (Input pins)
(4)
Input HIGH Current (I/O pins)
(4)
Input LOW Current (Input pins)
(4)
Input LOW Current (I/O pins)
(4)
High Impedance Output Current
(3-State Output pins)
(4)
Clamp Diode Voltage
Short Circuit Current
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Max
V
IN
= GND or V
CC
V
CC
= Min., I
IN
= –18mA
V
CC
= Max., V
O
= GND
(3)
—
V
CC
= Max.
V
O
= 2.7V
V
O
= 0.5V
V
I
= GND
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
I
= V
CC
Min.
2
—
—
—
—
—
—
—
—
–80
—
—
Typ.
(2)
—
—
—
—
—
—
—
—
–0.7
–140
100
5
Max.
—
0.8
±1
±1
±1
±1
±1
±1
–1.2
–250
—
500
V
mA
mV
µA
µA
Unit
V
V
µA
OUTPUT DRIVE CHARACTERISTICS
Symbol
I
ODL
I
ODH
V
OH
V
OL
Parameter
Output LOW Current
Output HIGH Current
Output HIGH Voltage
Output LOW Voltage
Test Conditions
(1)
V
CC
= 5V, V
IN
= V
IH
or V
IL,
V
O
= 1.5V
(3)
V
CC
= 5V, V
IN
= V
IH
or V
IL,
V
O
= 1.5V
(3)
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= Min.
V
IN
= V
IH
or V
IL
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. This test limit for this parameter is ±5µA at T
A
= –55°C.
Min.
60
–60
2.4
—
Typ.
(2)
115
–115
3.3
0.3
Max.
200
–200
—
0.55
Unit
mA
mA
V
V
I
OH
= –24mA
I
OL
= 24mA
3
IDT74FCT162827AT/CT
FAST CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current
(4)
Test Conditions
(1)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
xOE
1
= xOE
2
= GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
xOE
1
= xOE
2
= GND
One Bit Toggling
V
CC
= Max.
Outputs Open
fi = 2.5MHz
50% Duty Cycle
xOE
1
= xOE
2
= GND
Twenty Bits Toggling
V
IN
= V
CC
V
IN
= GND
Min.
—
—
Typ.
(2)
0.5
60
Max.
1.5
100
Unit
mA
µA/
MHz
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
—
0.6
1.5
mA
—
0.9
2.3
—
3
5.5
(5)
20.5
(5)
—
8
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP
N
CP
/2 + fiNi)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
N
CP
= Number of Clock Inputs at f
CP
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
4
IDT74FCT162827AT/CT
FAST CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
FCT162827AT
Symbol
t
PLH
t
PHL
Parameter
Propagation Delay
xAx to xYx
Condition
(1)
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(4)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(4)
R
L
= 500Ω
t
PHZ
t
PLZ
Output Disable Time
xOEx to xYx
C
L
= 5pF
(4)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
Min.
(2)
1.5
1.5
1.5
1.5
1.5
1.5
—
Max.
8
15
12
23
9
10
0.5
FCT162827CT
Min.
(2)
1.5
1.5
.5
1.5
1.5
1.5
—
Max.
3.7
7
4.8
9
4
4
0.5
ns
ns
ns
Unit
ns
t
PZH
t
PZL
Output Enable Time
xOEx to xYx
t
SK(o)
Output Skew
(3)
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. Skew between any two outputs, of the same package, switching in the same direction. This parameter is guaranteed by design.
4. This limit is guaranteed but not tested.
5
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