Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
2SB1624
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SD2493
APPLICATIONS
・Audio
,regulator and general purpose
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
固电
导½
半
PARAMETER
CONDITIONS
Open emitter
Open base
Collector-base voltage
Collector-emitter voltage
HA
INC
Emitter-base voltage
Collector current
Base current
Junction temperature
Storage temperature
ES
NG
Open collector
MIC
E
DUC
ON
VALUE
-110
OR
T
UNIT
V
V
V
A
A
W
℃
℃
-110
-5
-6
-1
Collector power dissipation
T
C
=25℃
60
150
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
CONDITIONS
I
C
=-30mA ;I
B
=0
I
C
=-5A ;I
B
=-5mA
I
C
=-5A ;I
B
=-5mA
V
CB
=-110V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-5A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-0.5A ; V
CE
=-12V
5000
110
100
MIN
-110
TYP.
2SB1624
MAX
UNIT
V
-2.5
-3.0
-100
-100
V
V
μA
μA
pF
MHz
Switching times
t
on
t
s
t
f
电半
固
Turn-on time
Storage time
Fall time
Transition frequency
导½
HA
INC
P
6500-20000
ES
NG
Y
15000-30000
I
C
=-5A;R
L
=6Ω
I
B1
=- I
B2
=-5mA
V
CC
=-30V
MIC
E
OR
UCT
ND
O
1.1
3.2
1.1
μs
μs
μs
h
FE
Classifications
O
5000-12000
2
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
PACKAGE OUTLINE
2SB1624
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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