Cx
(L
s.iis.ii
roduati, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
2SA1011
DESCRIPTION
• Low Collector Saturation Voltage-
: V
C
E
(
satr -0.5V(Typ.)@ l
c
= -0.5A
• Collector-Emitter Breakdown Voltage-
: V
(B
R)CEo=-160V(Min.)
• Complement to Type 2SC2344
PIN 1.BASE
I.COLLECTOR
3. EMITTER
TO-220C package
APPLICATIONS
• Designed for high-voltage switching, audio frequency power
amplifiers, 100W output predriver applications.
"«
1
MQ
U 1
A
t
:k
yy
:•
: '
B M
•*
V H |
^ «S
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
I
*
K
T
f
*-
H
f
T
eh'
^
—1
m
m
MIN
15.50
9.90
4.20
0.70
3.40
4.98
2.68
VCBO
Collector-Base Voltage
-180
V
H
••H J
•
Rh
VCEO
Collector-Emitter Voltage
-160
V
C^
i
Emitter-Base Voltage
-6
V
VEBO
Ic
Collector Current-Continuous
-1.5
A
D!M
A
B
r
D
H
•j
K
L
MAX
15.90
10.20
4.50
0.90
3.70
I CM
Collector Current-Peak
-3.0
A
F
G
PC
Total Power Dissipation® T
C
=25"C
25
W
0.44
13.00
1.20
2.70
2.30
1.29
Tj
Junction Temperature
150
'C
U
T
stg
Storage Temperature Range
-55-150
"C
R
S
U
V
6.45
8.66
5.18
2.90
0.60
13.40
1.45
2.90
2.70
1.35
6.65
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
aoii
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
10=25^
unless otherwise specified
SYMBOL
V(BR)CEO
2SA1011
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
CONDITIONS
lc= -1mA; RBE= °°
l
c
=-1mA; I
E
=0
l
E
=-10mA;l
c
=0
lc= -0.5A; I
B
= -50mA
lc=-10mA; V
CE
=-5V
V
CB
=-120V; I
E
=0
V
EB
= -4V; l
c
= 0
lc= -0.3A; V
CE
= -5V
lc= -50mA ;V
CE
= -10V
!E= 0; V
CB
= -10V; f
tes
t= 1.0MHz
MIN
TYP.
MAX
UNIT
V
V
V
-160
-180
-6
V(BR)CBO
V(BR)EBO
VcE(sat)
-0.5
-1.5
-10
-10
60
100
30
200
V
V
V
B
E(on)
ICBO
u A
uA
IEBO
hFE
fr
COB
MHz
PF
Switching Times
'on
Turn-On Time
Storage Time
Fall Time
l
c
= -0.5A, I
B
1= -I
B
2= -50mA
0.29
0.48
0.19
M s
M S
M S
*stg
tf
h
FE
Classifications
D
60-120
E
100-200
嵌入式系统
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