Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1011
DESCRIPTION
·With
TO-220 package
·Complement
to type 2SC2344
APPLICATIONS
·High
voltage switching ,
·Audio
frequency power amplifier;
·100W
output predriver applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-180
-160
-6
-1.5
-3.0
25
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-10mA ,R
BE
=∞
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-0.5A; I
B
=-50mA
I
C
=-10mA ; V
CE
=-5V
V
CB
=-120V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.3A ; V
CE
=-5V
I
C
=-50mA ; V
CE
=-10V
I
E
=0; f=1MHz ; V
CB
=-10V
60
MIN
-160
-180
-6
2SA1011
TYP.
MAX
UNIT
V
V
V
-0.5
-1.5
-10
-10
200
100
30
V
V
μA
μA
MHz
pF
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-0.5A ;I
B1
=-I
B2
=-50mA
V
CC
=20V; R
L
=40Ω
0.29
0.48
0.19
μs
μs
μs
h
FE
Classifications
D
60-120
E
100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1011
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1011
4
测试/测量
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