INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1303
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
V
(BR)CEO
= -150V(Min)
·Good
Linearity of h
FE
·Complement
to Type 2SC3284
APPLICATIONS
·Designed
for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-150
V
V
CEO
Collector-Emitter Voltage
-150
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-14
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
-3
A
P
C
125
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1303
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -25mA ; I
B
= 0
-150
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -5A; I
B
= -0.5A
B
-2.0
V
I
CBO
Collector Cutoff Current
V
CB
= -150V ; I
E
= 0
-100
μA
I
EBO
Emitter Cutoff Current
V
EB
= -5V; I
C
= 0
-100
μA
h
FE
DC Current Gain
I
C
= -5A ; V
CE
= -4V
50
180
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= -10V;f= 1.0MHz
400
pF
f
T
Current-Gain—Bandwidth Product
I
E
= 2A ; V
CE
= -12V
50
MHz
Switching Times
t
on
Turn-on Time
I
C
= -5A ,R
L
= 12Ω,
I
B1
= -I
B2
= -0.5A,V
CC
=
-60V
0.25
μs
t
stg
Storage Time
0.85
μs
t
f
Fall Time
0.2
μs
h
FE
Classifications
O
50-100
P
70-140
Y
90-180
2