Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA985 2SA985A
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC2275/2275A
・High
breakdown voltage
APPLICATIONS
・For
low frequency and high frequency
power amplifer applicatons
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
固电
导½
半
PARAMETER
CONDITIONS
2SA985
V
CBO
Collector-base voltage
V
CEO
V
EBO
I
C
I
CM
I
B
CH
IN
Base current
Collector-emitter voltage
ANG
2SA985A
2SA985
MIC
E SE
Open emitter
Open base
Open collector
OR
UCT
ND
O
VALUE
-120
-150
-120
-150
-5
-1.5
-3.0
-0.3
UNIT
V
V
2SA985A
Emitter-base voltage
Collector current
Collector current-peak
V
A
A
A
T
a
=25℃
P
T
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.5
W
25
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA985 2SA985A
MIN
TYP.
MAX
UNIT
2SA985
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA985A
I
C
=-25mA ,I
B
=0
-120
V
-150
V
CEsat
Collector-emitter saturation voltage
I
C
=-1A; I
B
=-0.1A
-0.3
-2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-1A; I
B
=-0.1A
-0.9
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-1.0
μA
I
EBO
Emitter cut-off current
V
EB
=-3V; I
C
=0
-1.0
μA
h
FE-1
DC current gain
h
FE-2
固电
DC current gain
导½
半
I
C
=-5mA ; V
CE
=-5V
I
C
=-0.3A ; V
CE
=-5V
C
OB
Output capacitance
f
T
Transition frequency
h
FE-2
Classifications
R
60-120
Q
100-200
HA
INC
P
ES
NG
I
E
=0 ; V
CB
=-10V,f=1MHz
MIC
E
OR
UCT
ND
O
60
150
320
29
180
35
pF
I
C
=-0.2A ; V
CE
=-5V
MHz
160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA985 2SA985A
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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