Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3284
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SA1303
APPLICATIONS
・Audio
and general purpose
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
固电
Collector-base voltage
导½
半
PARAMETER
CONDITIONS
ANG
CH
IN
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
OR
CT
NDU
O
VALUE
150
150
5
14
3
UNIT
V
V
V
A
A
W
℃
℃
T
C
=25℃
125
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=25mA ;I
B
=0
I
C
=5A I
B
=0.5A
V
CB
=150V I
E
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=4V
I
E
=0 ; V
CB
=10V;f=1MHz
I
E
=-2A ; V
CE
=12V
50
200
60
MIN
150
2SC3284
TYP.
MAX
UNIT
V
2.0
100
100
180
V
μA
μA
pF
MHz
Switching times
t
on
t
s
t
f
固电
Fall time
Turn-on time
Storage time
导½
半
ANG
CH
IN
P
70-140
Y
90-180
MIC
E SE
I
C
=5A;R
L
=12Ω
I
B1
=- I
B2
=0.5A
V
CC
=60V
OR
CT
NDU
O
0.20
1.50
0.35
μs
μs
μs
h
FE
Classifications
O
50-100
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3284
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3284
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4