INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3264
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
V
(BR)CEO
= 230V(Min)
·Good
Linearity of h
FE
·Complement
to Type 2SA1295
APPLICATIONS
·Designed
for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
230
V
230
V
5
V
17
A
5
A
200
W
150
℃
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
P
C
T
J
Junction Temperature
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC3264
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 25mA ; I
B
= 0
230
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 0.5A
B
2.0
V
I
CBO
Collector Cutoff Current
V
CB
= 230V; I
E
= 0
100
μA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
100
μA
h
FE
DC Current Gain
I
C
= 5A; V
CE
= 4V
50
140
C
OB
Output Capacitance
f
T
Current-Gain—Bandwidth Product
Switching times
t
on
Turn-on Time
t
stg
Storage Time
w
.cn
i
em
cs
.is
w
w
I
E
= 0; V
CB
= 10V;f
test
= 1.0MHz
I
E
= -2A; V
CE
= 12V
I
C
= 5A ,R
L
= 12Ω,
I
B1
= -I
B2
= 0.5A,V
CC
=
60V
250
pF
60
MHz
0.3
μs
2.4
μs
t
f
Fall Time
0.5
μs
h
FE
Classifications
O
50-100
Y
70-140
isc Website：www.iscsemi.cn
2
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