,
£J
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA1262
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V
(
BR)CEO= -60V(Min.)
• Low Collector Saturation Voltage
: V
CE
(satr -0.6V(Max.)@l
c
=
-2A
• Complement to Type 2SC3179
PIN 1.BASE
2.COLLECTOR
REMITTER
TO-220C package
APPLICATIONS
• Designed for audio and general purpose applications.
•«
B -
f
A
-, V •")
,,-F
*
1*0
U i
4-^J t
t,..:,
r
~~\h
J
% •*
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
-»•
*-
L
*
K
1
VCBO
Collector-Base Voltage
-60
V
T
G [*-
VCEO
Collector-Emitter Voltage
uV
D
J
-60
V
1
,_
C
VEBO
Emitter-Base Voltage
-6
V
i
mm
DIM
A
B
15.50
9.90
4.20
0.70
3.40
4.98
MAX
15.90
10.20
4,50
0.90
3.70
5.18
2.&S
2.90
0.44
0,60
13 ,,00
13.40
1,20
1,45
2.90
2.70
2.30 2.70
1.29
1.35
6.65
6.45
8.66
8.86
WIN
Ic
Collector Current-Continuous
-4
A
c
IB
Base Current-Peak
-1
A
D
F
«
H
,
fc
PC
Total Power Dissipation
@T
C
=25'C
30
W
Tj
Junction Temperature
150
•c
•c
Tstg
Storage Temperature Range
-55-150
K
L
Q
R
S
U
U
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished hy NJ Semi-Conductors is believed to be both accurate and reliable at the time of wing
to press. However. NJ Semi-Conductors assumes no responsibility tor an\s or omissions discovered in its use.
NJ Semi-Condiictors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25
1
C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1262
TYP.
MAX
UNIT
V(BR)ceo
Collector-Emitter Breakdown Voltage
l
c
= -25mA; I
B
= 0
-60
V
VcE(sat)
Collector-Emitter Saturation Voltage
l
c
= -2A; I
B
= -0.2A
-0.6
V
ICBO
Collector Cutoff Current
V
CB
= -60V; I
E
= 0
-100
uA
IEBO
Emitter Cutoff Current
V
EB
= -6V; l
c
= 0
-100
UA
hFE
DC Current Gain
l
c
= -1A; V
CE
= -4V
40
fi
Current-Gain— Bandwidth Product
I
E
=0.2A;V
CE
=-12V
15
MHz
COB
Output Capacitance
l
E
=0;VcB=-10V;f,
est
=1MHz
90
PF
Switching Times
ton
Turn-on Time
I
C
=-2A;R
L
= 10D,
I
B
1= -lB2= -0.2A, V
cc
= -20V
0.25
U S
'stg
Storage Time
0.75
M S
tf
Fall Time
0.25
M S
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