2SD886
Elektronische Bauelemente
3A , 50V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low frequency power amplifier
TO-126
1
Emitter
2
Collector
3
Base
High Current
Collector
2
3
Base
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
7.40
7.80
2.50
2.90
10.60
11.00
15.30
15.70
3.70
3.90
3.90
4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
1.10
1.50
0.45
0.60
0.66
0.86
2.10
2.30
1.17
1.37
3.00
3.20
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Maximum Junction to Ambient
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
R
θJA
P
C
T
J
, T
STG
Rating
50
50
5
3
125
1
150, -55~150
Unit
V
V
V
A
° /W
C
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
1
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Min.
50
50
5
-
-
100
100
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
80
45
Max.
-
-
-
1
1
-
400
0.5
2
-
-
Unit
V
V
V
µA
µA
Test Conditions
I
C
=100µA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A*
I
C
=2A, I
B
=200mA
I
C
=2A, I
B
=200mA
V
CE
=5V, I
C
=100mA
V
CB
=10V, I
E
=0, f=1MHz
Collector to Emitter Saturation Voltage
Base-emitter saturation voltage
Transition Frequency
Collector output capacitance
V
V
MHz
pF
Note:
1. Pulse test: pulse width
≤300µs,
duty cycle≤ 2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Mar-2011 Rev. A
Page 1 of 1
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