Freescale Semiconductor
Technical Data
MRF21085
Rev. 7, 1/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - carrier W - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1
-
5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 19 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 23%
IM3 — - 37.5 dBc
ACPR — - 41 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
µ″
Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
MRF21085R3
MRF21085LSR3
2170 MHz, 90 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF21085R3
CASE 465A - 06, STYLE 1
NI - 780S
MRF21085LSR3
Value
- 0.5, +65
- 0.5, +15
224
1.28
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.78
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF21085R3 MRF21085LSR3
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1000 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
3.6
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
—
3.9
0.18
6
4
5
0.21
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3
measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz
referenced to carrier channel power.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 90 W CW, I
DQ
= 1000 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
1. Part is internally matched both on input and output.
(continued)
G
ps
12
13.6
—
dB
η
20
23
—
%
IM3
—
- 37.5
- 35
dBc
ACPR
—
- 41
- 38
dBc
IRL
—
- 12
-9
dB
Ψ
No Degradation In Output Power
Before and After Test
MRF21085R3 MRF21085LSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
(continued)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
P
out
, 1 dB Compression Point
(V
DD
= 28 Vdc, I
DQ
= 1000 mA, f = 2170 MHz)
G
ps
—
13.6
—
dB
Symbol
Min
Typ
Max
Unit
η
—
36
—
%
IMD
—
- 31
—
dBc
IRL
—
- 12
—
dB
P1dB
—
100
—
W
MRF21085R3 MRF21085LSR3
RF Device Data
Freescale Semiconductor
3
V
BIAS
R1
+
R2
C5
C4
C3
R3
B1
+
C2
C7
C8
R4
V
SUPPLY
+
C9
C10
C11
+
C12
L1
Z4
RF
INPUT
Z8
RF
OUTPUT
Z1
C1
Z2
Z3
DUT
Z5
Z6
C6
Z7
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.750″
1.015″
0.480″
0.750″
0.610″
0.885″
0.720″
0.800″
x 0.084″
x 0.084″
x 0.800″
x 0.050″
x 0.800″
x 0.084″
x 0.084″
x 0.070″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Board
PCB
0.030″ Glass Teflon
,
Keene GX - 0300 - 55 - 22,
ε
r
= 2.55
Etched Circuit Boards
MRF21085 Rev. 3, CMR
Figure 1. MRF21085 Test Circuit Schematic
Table 5. MRF21085 Test Circuit Component Designations and Values
Designators
B1
C1, C6
C2
C3, C9
C4, C10
C5
C7
C8
C11, C12
L1
N1, N2
R1
R2
R3, R4
Description
Short Ferrite Bead, Fair Rite, #2743019447
43 pF Chip Capacitors, ATC #100B430JCA500X
10 pF Chip Capacitor, ATC #100B100JCA500X
1000 pF Chip Capacitors, ATC #100B102JCA500X
0.1
mF
Chip Capacitors, Kemet #CDR33BX104AKWS
1.0
mF
Tantalum Chip Capacitor, Kemet #T491C105M050
2.7 pF Chip Capacitor, ATC #100B2R7JCA500X
10
mF
Tantalum Chip Capacitor, Kemet #T495X106K035AS4394
22
mF
Tantalum Chip Capacitors, Kemet #T491X226K035AS4394
1 Turn, #20 AWG, 0.100″ ID
Type N Flange Mounts, Omni Spectra #3052 - 1648 - 10
1.0 kΩ, 1/8 W Chip Resistor
180 kΩ, 1/8 W Chip Resistor
10
Ω,
1/8 W Chip Resistors
MRF21085R3 MRF21085LSR3
4
RF Device Data
Freescale Semiconductor
C2
R1
B1
R2
C5 C4
CUT OUT
WB1
WB2
C3
R3
C7
C8
L1
C9
C10 R4
C11 C12
C1
C6
MRF21085
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF21085 Test Circuit Component Layout
MRF21085R3 MRF21085LSR3
RF Device Data
Freescale Semiconductor
5
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