HSM221C
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-028C (Z)
Rev. 3
Features
•
Low capacitance, proof against high voltage.
•
Fast recovery time.
•
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM221C
Laser Mark
A2
Package Code
MPAK
Pin Arrangement
3
2
1
(Top View)
1 NC
2 Anode
3 Cathode
HSM221C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Junction temperature
Storage temperature
Note: Within 1µs forward surge current.
Symbol
V
RM
V
R
I
FM
I
FSM
*
I
O
Tj
Tstg
Value
85
80
300
4
100
125
–55 to +125
Unit
V
V
mA
A
mA
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Symbol
V
F1
V
F2
V
F3
Reverse current
Capacitance
Reverse recovery time
I
R
C
t
rr
Min
—
—
—
—
—
—
Typ
0.76
0.88
0.97
—
0.5
—
Max
1.0
1.0
1.2
0.1
2.0
3.0
µA
pF
ns
Unit
V
Test Condition
I
F
= 10mA
I
F
= 50mA
I
F
= 100mA
V
R
= 80V
V
R
= 0V, f = 1MHz
I
F
= 10mA, V
R
= 6V, R
L
= 50Ω
HSM221C
10
–1
Forward current I
F
(A)
10
–2
10
–3
10
–4
10
–5
10
–6
0
0.6
0.8
0.2
0.4
Forward voltage V
F
(V)
Ta
=7
5
°
C
Ta
=2
5
°
C
Ta
=–
25
°
C
1.0
Fig.1 Forward current Vs. Forward voltage
–4
10
10
Reverse current I
R
(A)
–5
10
10
10
10
10
–6
Ta = 75°C
–7
Ta = 50°C
Ta = 25°C
–8
–9
Ta = 0°C
Ta = –25°C
–10
10
–11
0
60
80
20
40
Reverse voltage V
R
(V)
100
Fig.2 Reverse current Vs. Reverse voltage
HSM221C
f = 1MHz
10
Capacitance C (pF)
1.0
10
–1
1.0
10
Reverse voltage V
R
(V)
10
2
Fig.3 Capacitance Vs. Reverse voltage
HSM221C
Package Dimensions
Unit: mm
0.65
– 0.3
+ 0.1
Laser Mark
0.4
– 0.05
+ 0.10
0.16
– 0.06
+ 0.10
3
+ 0.2
– 0.6
0.1
0.65
+ 0.3
–
2
0.95
1
0.95
2.8
A 2
1.9
0.3
2.8
+ 0.1
–
1.5
0 – 0.10
1 NC
2 Anode
3 Cathode
0.3
HITACHI Code
1.1
– 0.1
+ 0.2
MPAK(1)
—
SC-59A
0.011
JEDEC Code
EIAJ Code
Weight (g)
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