DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYM56 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
1996 May 24
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack
•
Also available with preformed leads
for easy insertion.
DESCRIPTION
BYM56 series
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Rugged glass package, using a high
temperature alloyed construction.
2/3 page
k
(Datasheet)
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYM56A
BYM56B
BYM56C
BYM56D
BYM56E
V
RWM
crest working reverse voltage
BYM56A
BYM56B
BYM56C
BYM56D
BYM56E
V
R
continuous reverse voltage
BYM56A
BYM56B
BYM56C
BYM56D
BYM56E
I
F(AV)
average forward current
PARAMETER
repetitive peak reverse voltage
,
a
MAM104
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
3.5
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
UNIT
T
tp
= 60
°C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
amb
= 65
°C;
PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
−
−
1.4
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
2
−
80
A
1996 May 24
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYM56 series
SYMBOL
E
RSM
T
stg
T
j
PARAMETER
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
see Fig.5
CONDITIONS
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
MIN.
−
−65
−65
MAX.
20
+175
+175
UNIT
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BYM56A
BYM56B
BYM56C
BYM56D
BYM56E
I
R
reverse current
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.7
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.10
V
R
= 0 V; f = 1 MHz; see Fig.8
CONDITIONS
I
F
= 3 A; T
j
= T
j max;
see Fig.6
I
F
= 3 A; see Fig.6
I
R
= 0.1 mA
225
450
650
900
1100
−
−
−
−
−
−
−
−
−
−
3
−
−
−
−
−
1
150
−
V
V
V
V
V
µA
µA
µs
MIN.
−
−
TYP.
−
−
MAX.
0.95
1.15
V
V
UNIT
C
d
diode capacitance
−
90
−
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
25
75
UNIT
K/W
K/W
1996 May 24
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
GRAPHICAL DATA
MBG037
BYM56 series
MBG058
handbook, halfpage
5.0
IF(AV)
(A)
handbook, halfpage
2.0
IF(AV)
(A)
4.0
1.6
3.0
1.2
2.0
0.8
1.0
0.4
0
0
40
80
120
160
200
Ttp (
o
C)
0
0
40
80
120
160
200
Tamb (
o
C)
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Lead length 10 mm.
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.9.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC746
handbook, halfpage
5
handbook, halfpage
200
MSA873
P
(W)
4
a=3
2.5
2
1.57
1.42
Tj
(°C)
3
100
2
1
A
B
C
D
E
0
0
1
2
3
I
(A)
F(AV)
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
4
0
0
400
800
VR (V)
1200
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 24
4
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYM56 series
MBG046
MGC734
handbook, halfpage
16
10
3
handbook, halfpage
IR
(µA)
IF
(A)
12
10
2
max
8
10
4
1
0
0
1
VF (V)
2
10
−1
0
40
80
120
160
Tj ( C)
o
200
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
V
R
= V
RRMmax.
Fig.6
Forward current as a function of forward
voltage; maximum values.
Fig.7
Reverse current as a function of junction
temperature; maximum values.
10
2
handbook, halfpage
MBG027
handbook, halfpage
50
25
Cd
(pF)
7
10
50
2
3
1
10
10
2
VR (V)
10
3
MGA200
1
f = 1 MHz; T
j
= 25
°C.
Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 May 24
5
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