MOC8101X,MOC8102X,MOC8103X,
MOC8104X,MOC8105X MOC8101,
MOC8102, MOC8103,MOC8104,MOC8105
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
UL recognised, File No. E91231
Package Code " GG "
'X' SPECIFICATIONAPPROVALS
VDE 0884 in 3 available lead form : -
- STD
G form
1.2
2.54
7.0
6.0
1
2
3
Dimensions in mm
6
5
4
- SMD approved to CECC 00802
Certified to EN60950 by :-
Nemko - Certificate No. P01102464
DESCRIPTION
The MOC8101, MOC8102, MOC8103, MOC8104,
MOC8105 series of optically coupled isolators
consist of infrared light emitting diode and NPN
silicon photo transistor in a standard 6 pin dual
in line plastic package with the base pin
unconnected.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
Base pin unconnected for improved
noise
immunity in high EMI
environment
APPLICATIONS
DC motor controllers
Industrial systems controllers
Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
6.62
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
30V
6V
50mA
160mW
60mA
6V
105mW
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
16/9/08
DB92193
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Output Collector Current ( I
C
) ( Note 3 )
MOC8101
MOC8102
MOC8103
MOC8104
MOC8105
Collector-emitter SaturationVoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Response Time (Rise), tr
Response Time (Fall), tf
30
6
50
MIN TYP MAX UNITS
1.0
1.15
1.5
10
V
μA
V
V
nA
TEST CONDITION
I
F
= 10mA
V
R
= 6V
I
C
= 1mA
I
E
= 100μA
V
CE
= 10V
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
5mA I
F
, 0.5mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 5V , I
F
= 10mA
R
L
= 75Ω, (FIG 1)
Coupled
5.0
7.3
10.8
16
6.5
0.15
5300
7500
5x10
10
2
2
8.0
11.7
17.3
25.6
13.3
0.4
mA
mA
mA
mA
mA
V
V
RMS
V
PK
Ω
μs
μs
Note 1
Note 2
Note 3
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
Production testing - limits verified with pulse test
FIGURE1
16/9/08
DB92193
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
50
30
20
15
20
10
0
10
I
F
= 5mA
150
Collector current I
C
(mA)
40
30
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
Current transfer ratio CTR (%)
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
1
2
5
MOC8101
10
20
50
MOC8104
MOC8103
MOC8102
V
CE
= 10V
T
A
= 25°C
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
DB92193
I
F
= 10mA
V
CE
= 10V
Collector-emitter saturation voltage V
CE(SAT)
(V)
Relative current transfer ratio
I
F
= 5mA
I
C
= 0.5mA
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
16/9/08
100
Ambient temperature T
A
( °C )
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