BFP740
NPN Silicon Germanium RF Transistor
•
High gain ultra low noise RF transistor
•
Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
•
Ideal for CDMA and WLAN applications
•
Outstanding noise figure
F
= 0.5 dB at 1.8 GHz
Outstanding noise figure
F
= 0.85 dB at 6 GHz
•
High maximum stable gain
G
ms
= 27 dB at 1.8 GHz
•
Gold metallization for extra high reliability
•
150 GHz
f
T
-Silicon Germanium technology
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
4
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFP740
1
Pb-containing
Marking
R7s
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
SOT343
package may be available upon special request
2009-12-04
1
BFP740
Maximum Ratings
Parameter
Collector-emitter voltage
T
A
> 0°C
T
A
≤
0°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
89°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
Symbol
R
thJS
Value
≤
380
Unit
K/W
T
j
T
A
T
stg
150
-65 ... 150
-65 ... 150
°C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
Symbol
V
CEO
4
3.5
13
13
1.2
30
3
160
mW
mA
Value
Unit
V
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 13 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 25 mA,
V
CE
= 3 V, pulse measured
1
T
Unit
max.
-
30
100
3
400
V
µA
nA
µA
-
typ.
4.7
-
-
-
250
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4
-
-
-
160
S is measured on the collector lead at the soldering point to the pcb
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2009-12-04
2
BFP740
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 25 mA,
V
CE
= 3 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 8 mA,
V
CE
= 3 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 8 mA,
V
CE
= 3 V,
f
= 6 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 6 GHz
Transducer gain
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
f
= 6 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 25 mA,
Z
S
=Z
L
=50
Ω
,
f
=
1
.
8 GHz
1dB Compression point at output
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=Z
L
=50
Ω
,
f
=
1
.
8 GHz
1/2
ma = |
S
21e /
S
12e| (k-(k²-1) ),
G
ms = |
S
21e /
S
12e |
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
1
G
-
-
42
0.08
-
0.14
GHz
pF
C
cb
C
ce
-
0.24
-
C
eb
-
0.44
-
F
-
-
G
ms
-
0.5
0.85
27
-
-
-
dB
dB
G
ma
-
17
-
dB
|S
21e
|
2
-
-
IP
3
P
-1dB
-
-
24.5
13.5
25
11
-
-
-
-
dB
dBm
2009-12-04
3
BFP740
Simulation Data
For SPICE-model as well as for S-parameters including noise parameters refer
to our internet website:
www.infineon.com/rf.models.
Please consult our website
and download the latest version before actually starting your design.
The simulation data have been generated and verified up to 12 GHz using typical
devices. The BFP740 nonlinear SPICE-model reflects the typical DC- and RF-device
performance with high accuracy.
2009-12-04
4
BFP740
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
180
mW
10
3
140
120
100
K/W
R
thJS
P
tot
10
2
80
60
40
20
0
0
10
1 -7
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
15
30
45
60
75
90 105 120
°C
150
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
2
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1 MHz
0.2
P
totmax
/P
totDC
0.18
-
0.16
0.14
C [pF]
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.12
cb
0.1
0.08
0.06
0.04
0.02
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
0
0
2
4
6
8
10
12
T
P
V
CB
[V]
2009-12-04
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
