电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

JAN1N758A

产品描述Zener Diode, 10V V(Z), 5%, 0.4W,
产品类别分立半导体    二极管   
文件大小70KB,共19页
制造商Bkc Semiconductors Inc
下载文档 详细参数 全文预览

JAN1N758A概述

Zener Diode, 10V V(Z), 5%, 0.4W,

JAN1N758A规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Bkc Semiconductors Inc
Reach Compliance Codeunknown
配置SINGLE
二极管类型ZENER DIODE
最大动态阻抗7 Ω
JESD-609代码e0
元件数量1
最高工作温度175 °C
最大功率耗散0.4 W
标称参考电压10 V
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
最大电压容差5%
工作测试电流20 mA

文档预览

下载PDF文档
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 08 October 1999.
INCH-POUND
MIL-PRF-19500/127N
09 July 1999
SUPERSEDING
MIL-S-19500/127M
14 March 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4370A-1 THROUGH 1N4372A-1, AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH 1N4372AUR-1 AND
1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1, AND 1N746C-1 THROUGH 1N759C-1, 1N4370CUR-1
THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1, 1N4370D-1, THROUGH 1N4372D-1, AND 1N746D-1
THROUGH 1N759D-1, 1N4370DUR-1 THROUGH 1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1,
JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS level (see 6.3).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage
tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
Two level of product assurance is provided for die.
1.2 Physical dimensions. See 3.3 and figure 1 (similar to DO-35) and figure 2 (similar to DO-213AA), and figures 3 and 4 for die.
1.3 Maximum ratings. Maximum ratings are as shown in column 4 table II herein and as follows:
P
T
= 500 mW, (DO-35) at T
L
= +50
°
C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175
°
C.
-65
°
C
T
J
+175
°
C; -65
°
C
T
STG
+175
°
C
P
T
= 500 mW, (DO-213AA) at T
EC
= +125
°
C, derate to 0 at +175
°
C.
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2, 9, 12, and 14 table II herein and as
follows:
2.4 V dc
V
Z
12 v dc
1N4370A-1 through 1N4372A-1 and 1N746A-1 through 1N759A-1 are
±
5 percent voltage tolerance.
1N4370C-1 through 1N4372C-1 and 1N746C-1 through 1N759C-1 are
±
2 percent voltage tolerance.
1N4370D-1 through 1N4372D-1 and 1N746D-1 through 1N759D-1 are
±
1 percent voltage tolerance.
Thermal resistance:
R
θ
JL
= 250
°
C/W maximum at L = .375 inch (9.53 mm) (D0-35).
R
θ
JEC
= 100
°
C/W maximum. Junction to end-caps (D0-213AA).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2820  247  2612  2915  2924  1  41  37  59  23 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved