1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Max.
3.6
0
V
DD
+0.3
(1)
0.8
Unit
V
V
V
V
6818 tbl 05
Capacitance
(T
A
= +25°C, f = 1.0MHz, SOJ/TSOP package)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
6
7
Unit
pF
pF
6818 tbl 06
NOTE:
1. Refer to maximum overshoot/undershoot diagram below. The measured
voltage at device pin should not exceed half sinusoidal wave with 2V peak and
half period of 2ns.
Maximum Overshoot/Undershoot
V
IH
+2V
2ns
V
IL
2ns
-2V
6818 drw 12
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
DC Electrical Characteristics
(V
DD
= Min. to Max., Automotive Temperature Ranges)
Automotive
Temperature
Grade
1 and 2
|I
LI
|
Input Leakage Current
V
DD
= Max., V
IN =
V
SS
to V
DD
3 and 4
|I
LO
|
V
OL
V
OH
Output Leakage Current
Output Low Voltage
Output High Voltage
V
DD
= Max.,
CS
= V
IH
, V
OUT
= V
SS
to V
DD
I
OL
= 8mA, V
DD
= Min.
I
OH
= -4mA, V
DD
= Min.
1 and 2
3 and 4
___
IDT71V016SA
Min.
___
Symbol
Parameter
Test Conditions
Max.
5
Unit
µA
1
5
µA
1
0.4
___
___
___
___
V
V
6818 tbl 07
2.4
6.42
3
IDT71V016SA, 3.3V CMOS Static RAM
for Automotive Applications 1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics
(1,2)
(V
DD
= Min. to Max., V
LC
= 0.2V, V
HC
= V
DD
– 0.2V, Automotive Temperature Ranges)
71V016SA12
Parameter
Symbol
1
I
CC
Dynamic Operating Current
CS
< V
LC
, Outputs Open, V
DD
= Max., f = f
MAX
(3)
Dynamic Standby Power Supply Current
CS
> V
HC
, Outputs Open, V
DD
= Max., f = f
MAX
(3)
Full Standby Power Supply Current (static)
CS
> V
HC
, Outputs Open, V
DD
= Max., f = 0
(3)
Max.
Typ.
(4)
110
75
45
5
2
100
75
45
5
3 and 4
90
75
35
2
1
80
70
35
5
2
80
70
35
5
3 and 4
80
70
30
2
1
80
70
30
5
2
80
70
30
5
3 and 4
80
mA
70
30
2
mA
mA
Automotive Grade
71V016SA15
Automotive Grade
71V016SA20
Automotive Grade
Unit
I
SB
I
SB1
6818 tbl 8
NOTES:
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and V
DD
– 0.2V (High).
3. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
); f = 0 means no address input lines are changing .
4. Typical values are measured at 3.3V, 25°C and with equal read and write cycles. These parameter is guaranteed by device characterization but is not production
tested.
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
1.5ns
1.5V
1.5V
See Figure 1, 2 and 3
6818 tbl 09
AC Test Loads
+1.5V
50
W
30pF
6818 drw 03
3.3V
320
W
350
W
6818 drw 04
DATA
OUT
5pF*
I/O
Z
0
=
50W
*Including jig and scope capacitance.
Figure 2. AC Test Load
(for t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
OW,
and t
WHZ
)
Figure 1. AC Test Load
7
6
Dt
AA,
t
ACS
(Typical, ns) 5
4
3
2
1
•
8 20 40 60 80 100 120 140 160 180 200
CAPACITANCE (pF)
6818 drw 05
Figure 3. Output Capacitive Derating
6.42
4
IDT71V016SA, 3.3V CMOS Static RAM
for Automotive Applications 1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
Symbol
READ CYCLE
t
RC
t
AA
t
ACS
t
CLZ
(1,2)
t
CHZ
(1,2)
t
OE
t
OLZ
(1,2)
t
OHZ
(1,2)
t
OH
t
BE
t
BLZ
(1,2)
t
BHZ
(1,2)
t
PU
(3)
t
PD
(3)
WRITE CYCLE
t
WC
t
AW
t
CW
t
BW
t
AS
t
WR
t
WP
t
DW
t
DH
t
OW
(1,2)
t
WHZ
(1,2)
Write Cycle Time
Address Valid to End of Write
Chip Select Low to End of Write
Byte Enable Low to End of Write
Address Set-up Time
Address Hold from End of Write
Write Pulse Width
Data Valid to End of Write
Data Hold Time
Write Enable High to Output in Low-Z
Write Enable Low to Output in High-Z
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Low to Output in Low-Z
Chip Select High to Output in High-Z
Output Enable Low to Output Valid
Output Enable Low to Output in Low-Z
Output Enable High to Output in High-Z
Output Hold from Address Change
Byte Enable Low to Output Valid
Byte Enable Low to Output in Low-Z
Byte Enable High to Output in High-Z
Chip Select Low toPower Up
Chip Select High toPower Down
Parameter
(V
DD
= Min. to Max., Automotive Temperature Ranges)
71V016SA12
Min.
Max.
71V016SA15
Min.
Max.
71V016SA20
Min.
Max.
Unit
12
____
____
____
15
____
____
____
20
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12
12
____
15
15
____
20
20
____
4
____
5
____
5
____
6
6
____
6
6
____
8
8
____
____
____
____
1
____
1
____
1
____
6
—
6
____
6
—
6
____
8
—
8
____
4
—
1
____
4
—
1
____
4
____
1
____
6
____
6
____
8
____
0
____
0
____
0
____
12
15
20
12
8
8
9
0
0
8
6
0
3
____
____
____
____
____
____
____
____
____
____
15
10
10
10
0
0
10
8
0
3
____
____
____
____
____
____
____
____
____
____
20
12
12
12
0
0
12
9
0
3
____
____
____
____
____
____
____
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6818 tbl 10
____
____
____
6
6
8
NOTES:
1. At any given temperature and voltage condition, tCHZ is less than tCLZ, tOHZ is less than tOLZ, and tWHZ is less than tOW for any given device.
2. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
3. This parameter is guaranteed by design and not production tested.
Yamaha Motor Group旗下的i-PULSE有限公司日前已与华尔莱科技（Valor）结为合作伙伴关系，基于Valor的vPlan生产规划工具向i-PULSE组装设备的使用者提供完整的从设计到制造的NPI解决方案。在近期日本东京举办的Protec展会（6/11-6/13）上，i-PULSE首度展出了该新产品并将直接向其客户进行销售。 新产品的名称为“iPlan”，它将提供一系...[详细]
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